MC9S12DT128B Device User Guide — V01.07

A.3.1.3 Sector Erase

Erasing a 512 byte Flash sector or a 4 byte EEPROM sector takes:

 

 

 

1

tera

4000

---------------------

 

 

 

fNVMOP

The setup times can be ignored for this operation.

A.3.1.4 Mass Erase

Erasing a NVM block takes:

 

 

1

tmass 20000

---------------------

 

 

fNVMOP

The setup times can be ignored for this operation.

A.3.1.5 Blank Check

The time it takes to perform a blank check on the Flash or EEPROM is dependant on the location of the first non-blank word starting at relative address zero. It takes one bus cycle per word to verify plus a setup of the command.

tcheck location tcyc + 10 tcyc

Table A-11 NVM Timing Characteristics

Conditions are shown in Table A-4unless otherwise noted

Num

C

Rating

Symbol

Min

Typ

Max

Unit

 

 

 

 

 

 

 

 

1

D

External Oscillator Clock

fNVMOSC

0.5

 

50 1

MHz

2

D

Bus frequency for Programming or Erase Operations

fNVMBUS

1

 

 

MHz

3

D

Operating Frequency

fNVMOP

150

 

200

kHz

4

P

Single Word Programming Time

tswpgm

46 2

 

74.5 3

μs

5

D

Flash Burst Programming consecutive word 4

tbwpgm

20.4 2

 

31 3

μs

6

D

Flash Burst Programming Time for 32 Words 4

tbrpgm

678.4 2

 

1035.5 3

μs

7

P

Sector Erase Time

tera

20 5

 

26.7 3

ms

8

P

Mass Erase Time

tmass

100 5

 

133 3

ms

9

D

Blank Check Time Flash per block

tcheck

11 6

 

32778 7

tcyc

10

D

Blank Check Time EEPROM per block

tcheck

11 6

 

20587

tcyc

NOTES:

1.Restrictions for oscillator in crystal mode apply!

2.Minimum Programming times are achieved under maximum NVM operating frequency fNVMOP and maximum bus frequency

fbus.

3.Maximum Erase and Programming times are achieved under particular combinations of fNVMOP and bus frequency fbus. Refer to formulae in Sections A.3.1.1 - A.3.1.5 for guidance.

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Motorola MC9S12DJ128B, MC9S12DT128B manual Sector Erase, Mass Erase, Blank Check, Table A-11 NVM Timing Characteristics