Xilinx UG518 manual MB DDR2 Component Memory

Models: UG518

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Chapter 1: SP601 Evaluation Board

Table 1-2:I/O Voltage Rail of FPGA Banks (Cont’d)

FPGA Bank

I/O Voltage Rail

 

 

2

2.5V

 

 

3

1.8V

 

 

References

See the Xilinx Spartan-6 FPGA documentation for more information at

http://www.xilinx.com/support/documentation/spartan-6.htm.

2. 128 MB DDR2 Component Memory

There are 128 MB of DDR2 memory available on the SP601 board. A 1-Gb Elpida EDE1116ACBG (84-ball) DDR2 memory component is accessible through Bank 3 of the LX16 device. The Spartan-6 FPGA hard memory controller is used for data transfer across the DDR2 memory interface's 16-bit data path using SSTL18 signaling. The maximum data rate supported is 800 Mb/s with a memory clock running at 400 MHz. Signal integrity is maintained through DDR2 resistor terminations and memory on-die terminations (ODT), as shown in Table 1-3and Table 1-4.

Table 1-3:Termination Resistor Requirements

Signal Name

Board Termination

On-Die Termination

 

 

 

DDR2_A[14:0]

49.9 ohms to VTT

 

DDR2_BA[2:0]

49.9 ohms to VTT

 

DDR2_RAS_N

49.9 ohms to VTT

 

DDR2_CAS_N

49.9 ohms to VTT

 

DDR2_WE_N

49.9 ohms to VTT

 

DDR2_CS_N

100 ohms to GND

 

 

 

 

DDR2_CKE

4.7K ohms to GND

 

 

 

 

DDR2_ODT

4.7K ohms to GND

 

 

 

 

DDR2_DQ[15:0]

 

ODT

 

 

 

DDR2_UDQS[P,N],

 

ODT

DDR2_LDQS[P,N]

 

 

 

 

 

 

DDR2_UDM, DDR2_LDM

 

ODT

 

 

 

DDR2_CK[P,N]

100 ohm differential at

 

memory component

 

 

 

 

 

 

Notes:

1. Nominal value of VTT for DDR2 interface is 0.9V.

Table 1-4:FPGA On-Chip (OCT) Termination External Resistor Requirements

FPGA U1 Pin

FPGA Pin Number

Board Connection for OCT

 

 

 

ZIO

L6

No Connect

 

 

 

RZQ

C2

100 ohms to GROUND

 

 

 

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SP601 Hardware User Guide

 

 

UG518 (v1.1) August 19, 2009

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Xilinx UG518 manual MB DDR2 Component Memory