Intel BX80646E31230V3, BX80646E31240V3 manual 96

Processor—Electrical Specifications

Table 42.	VCCIO_OUT, VCOMP_OUT, and VCCIO_TERM
	Symbol	Parameter	Typ	Max	Units	Notes
	VCCIO_OUT	Termination	1.0	—	V
		Voltage
	ICCIO_OUT	Maximum	—	300	mA
		External Load
	VCOMP_OUT	Termination	1.0	—	V	1
		Voltage
	VCCIO_TERM	Termination	1.0	—	V	2
		Voltage
	Notes: 1. VCOMP_OUT may only be used to connect to PEG_RCOMP and DP_RCOMP.
	2. Internal processor power for signal termination.

Table 43.	DDR3/DDR3L Signal Group DC Specifications
	Symbol	Parameter	Min	Typ	Max	Units	Notes1
	VIL	Input Low Voltage	—	VDDQ/2	0.43*VDDQ	V	2, 4, 11
	VIH	Input High Voltage	0.57*VDDQ	VDDQ/2	—	V	3, 11
	VIL	Input Low Voltage	—	—	0.15*VDDQ	V	—
		(SM_DRAMPWROK)
	VIH	Input High Voltage	0.45*VDDQ	—	1.0	V	10, 12
		(SM_DRAMPWROK)
		DDR3/DDR3L Data
	RON_UP(DQ)	Buffer pull-up	20	26	32	Ω	5, 11
		Resistance
		DDR3/DDR3L Data
	RON_DN(DQ)	Buffer pull-down	20	26	32	Ω	5, 11
		Resistance
		DDR3/DDR3L On-die		50	62	Ω	11
	RODT(DQ)	termination equivalent	38
		resistance for data
		signals
		DDR3/DDR3L On-die	0.45*VDDQ	0.5*VDDQ	0.55*VDDQ	V	11
	VODT(DC)	termination DC working
		point (driver set to
		receive mode)
		DDR3/DDR3L Clock	20	26	32	Ω	5, 11,
	RON_UP(CK)	Buffer pull-up					13
		Resistance
		DDR3/DDR3L Clock					5, 11,
	RON_DN(CK)	Buffer pull-down	20	26	32	Ω
							13
		Resistance
		DDR3/DDR3L Command					5, 11,
	RON_UP(CMD)	Buffer pull-up	15	20	25	Ω
							13
		Resistance
		DDR3/DDR3L Command					5, 11,
	RON_DN(CMD)	Buffer pull-down	15	20	25	Ω
							13
		Resistance
		DDR3/DDR3L Control					5, 11,
	RON_UP(CTL)	Buffer pull-up	19	25	31	Ω
							13
		Resistance
						continued...

Intel® Xeon® Processor E3-1200 v3 Product Family
Datasheet – Volume 1 of 2	June 2013
96	Order No.: 328907-001