Marvel Group 88F6281 specifications Sdram DDR2 Interface DC Electrical Specifications, Rtt

Models: 88F6281

1 140
Download 140 pages 58.14 Kb
Page 83
Image 83

Electrical Specifications

DC Electrical Specifications

8.5.3SDRAM DDR2 Interface DC Electrical Specifications

In the following table, VREF is VDD_M/2 and VDDIO means the VDD_M power rail.

Table 41: SDRAM DDR2 Interface DC Electrical Specifications

Parameter

Symbol

Test Condition

Min

Typ

Max

Units

Notes

Input low level

VIL

-

-0.3

 

VREF - 0.125

V

-

Input high level

VIH

-

VREF + 0.125

 

VDDIO + 0.3

V

-

Output low level

VOL

IOL = 13.4 mA

 

 

0.28

V

-

Output high level

VOH

IOH = -13.4 mA

1.42

 

 

V

-

 

 

 

120

150

180

ohm

1 , 2

Rtt effective impedance value

RTT

See note 2

60

75

90

ohm

1 , 2

 

 

 

40

50

60

ohm

1 , 2

Deviation of VM w ith respect to VDDQ/2

dVm

See note 3

-6

 

6

%

3

Input leakage current

IIL

0 < VIN < VDDIO

-10

 

10

uA

4, 5

Pin capacitance

Cpin

-

 

5

 

pF

-

Notes:

General comment: See the Pin Description section for internal pullup/pulldow n.

1.See SDRAM functional description section for ODT configuration.

2.Measurement definition for RTT: Apply VREF +/- 0.25 to input pin separately,

then measure current I(VREF + 0.25) and I(VREF - 0.25) respectively.

RTT =

0.5

I (VREF + 0.25 ) I (VREF 0.25 )

3. Measurement definition for VM: Measured voltage (VM) at input pin (midpoint) w ith no load.

2 × Vm

 

 

dVM = ⎜

 

1

× 100 %

 

VDDIO

 

 

4.While I/O is in High-Z.

5.This current does not include the current flow ing through the pullup/pulldow n resistor.

Copyright © 2008 Marvell

 

Doc. No. MV-S104859-U0 Rev. E

December 2, 2008, Preliminary

Document Classification: Proprietary Information

Page 83

Page 83
Image 83
Marvel Group 88F6281 specifications Sdram DDR2 Interface DC Electrical Specifications, Rtt