GDR288**S (Relay Type Output) GDD288P*S (PNP Type transistor output) GDD288N*S (NPN Type transistor output)

Digital Inputs

Digital outputs

Rated Input voltage

Rated Input Current

Input Impedance

Minimum ON voltage Maximum OFF voltage Turn ON time

Turn OFF time Isolation Connection method

Output Capacity

Rated load

General

Operating Temperature

Storage Temperature

Operating Humidity

Vibration

Shock

Mechanical Dimension Weight

FTB

(Fast Transient / Burst) Electrostatic discharge Electromagnetic field

8 Normal inputs 4 points per common. Bidirectional type.

8 Relay (Form A) outputs. 4 points per common.

8 PNP type Transistor output. 4 points per common.

8 NPN type Transistor output. 4 points per common.

24VDC

Upto 5mA

5.4K ohm

9.6VDC

3.6VDC

10 msec

10 msec

Optically isolated from the internal circuit Removable terminals (3.81mm pitch)

2A per o/p. 8A per common for Relay type output

500mA max for PNP and NPN type transistor output

230V / 2A, 30VDC / 2A (for Relay), 500mA at 24VDC (for transistor)

0 to 55 deg.C.

-20 to 85 deg.C.

10% to 90% (Non condensing)

10Hz to 150Hz ,displacement of 0.2 mm (peak) (3 mutually perpendicular axes)

490.5m/s2,2 half-sine shocks per axis, on 3 mutually perpendicular axes)

100mm X 35mm X 70mm 150 gm.

IEC61000-4-4 [2.2kV (Power- Direct Injection), 1.2KV (I/O - Capacitive clamp).]

IEC61000-4-2 Level 3

IEC61000-4-3, 10 V/m AM modulation (80 MHz to 1 GHz)

Power Rating (Back Plane)

Voltage Rating

3.75 VDC derived from

 

base model

Current Rating

Upto 80mA

 

 

Power Supply:

24VDC, 50mA

 

100mA for relay coil supply

 

 

Input per channel:

24VDC, 5mA

 

 

Output per channel:

0.5 A, 24VDC and

 

For GDR288*3S: 230V, 2A /

 

24VDC, 2A

RF Immunity

IEC61000-4-6, 10 V/m AM modulation

 

(0.15MHz to 80 MHz)

Dumped Oscillatory wave IEC61000-4-12

Surge Immunity

IEC61000-4-5 Level 2

Radiated emission

EN50081-2

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Toshiba V200 user manual Ftb