10054h 802Bh 10056h 802Ch 10058h 802Dh | Samsung KFKAGH6Q4M guide

Flex-MuxOneNAND4G(KFM4GH6Q4M-DEBx)

Flex-MuxOneNAND8G(KFN8GH6Q4M-DEBx)

Flex-MuxOneNAND16G(KFKAGH6Q4M-DEBx)

FLASH MEMORY

Buf.

Word

Byte

F

E

D

C

B

A

9

8

7

6

5

4

3

2

1

0

Address

Address

DataS 0_2

8020h

10040h

BI(Bad block Information )

8021h

10042h

Managed by internal ECC logic

8022h

10044h

8023h

10046h

8024h

10048h

8025h

1004Ah

4bit ECC parity values

8026h

1004Ch

8027h

1004Eh

DataS 0_3

8028h

10050h

BI(Bad block Information )

8029h

10052h

Managed by internal ECC logic

802Ah

10054h

802Bh

10056h

802Ch

10058h

802Dh

1005Ah

4bit ECC parity values

802Eh

1005Ch

802Fh

1005Eh

DataS 1_0

8030h

10060h

BI(Bad block Information )

8031h

10062h

Managed by internal ECC logic

8032h

10064h

8033h

10066h

8034h

10068h

8035h

1006Ah

4bit ECC parity values

8036h

1006Ch

8037h

1006Eh

DataS 1_1

8038h

10070h

BI(Bad block Information )

8039h

10072h

Managed by internal ECC logic

803Ah

10074h

803Bh

10076h

803Ch

10078h

803Dh

1007Ah

4bit ECC parity values

803Eh

1007Ch

803Fh

1007Eh

DataS 1_2

8040h

10080h

BI(Bad block Information )

8041h

10082h

Managed by internal ECC logic

8042h

10084h

8043h

10086h

8044h

10088h

8045h

1008Ah

4bit ECC parity values

8046h

1008Ch

8047h

1008Eh

- 34 -

Image 34

Samsung KFKAGH6Q4M, KFN8GH6Q4M, KFM4GH6Q4M 10054h 802Bh 10056h 802Ch 10058h 802Dh, 10074h 803Bh 10076h 803Ch 10078h 803Dh

Contents

KFM4GH6Q4M KFN8GH6Q4M KFKAGH6Q4M Remark Initial issueRevision No History Draft Date Corrected errata Oct Ordering Information General Overview Device Performance Product FeaturesDevice Architecture System Hardware Detailed Product Description Definitions 1 4Gb KFM4GH6Q4M / 8Gb KFN8GH6Q4M Pin Configuration63ball, 10mm x 13mm x max 1.0mmt , 0.8mm ball pitch FBGA4Gb 2 16Gb Product KFKAGH6Q4M TBD TOP VIEW, Balls Facing Down 63ball Fbga OneNAND Chip Register read cycles Pin DescriptionMultiplexed Address/Data bus Interrupt Internal Nand Array Memory Organization Block DiagramMemory Array Organization OTP BlockMLC SectorBlockSLC External BufferRAM Memory BootRAM 1KB DataRAM0 2KB DataRAM1 2KBBoot code Nand Array OTP Block Internal Nand Array Memory 0000h Memory MapBlock Block Address Size 256KB Block Block Address Block129 Block128Block160 Block161 Block238 00EEh Block240 00F0h Block289 0121h Block258 Block256Block288 0120h Block257 Block290 0122h Block259 Block353 0161h Block322 Block320Block352 0160h Block321 Block354 0162h Block323 Block385 Block384Block416 Block417 Block494 01EEh Block496 01F0h Block545 0221h Block514 Block512Block544 0220h Block513 Block546 0222h Block515 Block609 0261h Block578 Block576Block608 0260h Block577 Block610 0262h Block579 Block641 Block640Block672 Block673 Block750 02EEh Block752 02F0h Block801 0321h Block770 Block768Block800 0320h Block769 Block802 0322h Block771 Block865 0361h Block834 Block832Block864 0360h Block833 Block866 0362h Block835 Block897 Block896Block928 Block929 Block1006 03EEh Block1008 03F0h 256W Internal Memory Spare Area AssignmentArea Byte External Memory BufferRAM Address Map Division Address Size Usage Description External Memory Map Detail Information BootRAMMain areaBootRAMSpare area DataRAMMain area External Memory Spare Area Assignment Buf Word Byte 10074h 803Bh 10076h 803Ch 10078h 803Dh 10054h 802Bh 10056h 802Ch 10058h 802Dh4bit ECC parity values 8046h 1008Ch 8047h 1008Eh 10092h Managed by internal ECC logic DataS10090h BIBad block Information 10094h 804Bh 10096h 804Ch 10098h 804Dh Register Address Map RegistersAddress Name Host Description Device ID Register F001h R Device ID DefaultManufacturer ID Register F000h R Device Identification Data Buffer Size Register F003h R Version ID Register F002hThis register is reserved for future use Amount of Buffers Register F005h R Boot Buffer Size Register F004h RTechnology Register F006h R Start Address2 Register F101h R/W Start Address1 Register F100h R/W11~15 Start Address3~7 Register F102h~F106h Start Address8 Register F107h R/W Start Buffer Register F200h R/W Sector allocation according to BSCCASE2 FSA=01 BSC = Sector allocation according to BSCCASE1 FSA=00 BSC =BSC =111 Sector allocation according to BSCCASE3 FSA=10 BSC = CMD Command Register F220h R/WAcceptable Operation Write command into INT will automatically Two Methods to Clear Interrupt Register in Command InputInterrupt Register System Configuration 1 Register F221h R, R/W Brwl Burst Length BL Information119 Burst Length BLBurst LengthMain Burst LengthSpare RDY Polarity RDYpol Information7 Iobe MRSMode Register Setting Description Write Mode WMWrite Mode Information1 Definition Description Bwps PIL System Configuration 2 Register F222hController Status Register F240h R Otpl Otpbl Otpl INT Interrupt Status Register F241h R/WRsti Read Interrupt RI WI Interrupt Status Conditions Default State ValidEI Interrupt Status Conditions Default State Valid RI Interrupt Status Conditions Nand Flash Write Protection Status Register F24Eh R Start Block Address Register F24Ch R/WStart Block Address Register F24Dh R/W SBA ECC Status Register 4 FF03h R FF03h, default = 0000h ECC Status Register 2 FF01h R FF01h, default = 0000hECC Status Register 3 FF02h R FF02h, default = 0000h ECC Status Register 1 FF00h R Reset Flex-MuxOneNAND Add BP1 Data 00F0h Command Based OperationAdd Data 00E0h 0000h3 Read Identification Data XXXXh4 0090h Read Identification Data Command Reset Flex-MuxOneNAND CommandLoad Data Into Buffer Command Identification Data Description Address Data Out Operation ADQ0~15 Device Bus OperationCLK AVD Reset Mode Operation BP-F0h Hot Reset Mode Operation Cold Reset Mode OperationWarm Reset Mode Operation Nand Flash Core Reset Mode Operation Nand Flash Array Write Protection Operation BootRAM Write Protection OperationWrite Protection Operation Nand Array Write Protection States Locked Lock Command Sequence Unlocked Unlock Command SequenceUnlocked All Block Unlock Command Sequence Unlocked Nand Array Write Protection State Start block address+Lock-tight block command 002Ch Nand Flash Array Write Protection State DiagramLocked-tight Lock-Tight Command Sequence Locked-tight Nand Array Write Protection State DBS, DFS is for DDP Samsung strongly recommends to follow the above flow chartLock/Unlock/Lock-TightError completed DQ10=0? All Block Unlock Completed Data Protection During Power Down Operation Load Operation Superload Operation LSB Page Recovery Read Synchronous Read Mode Operation RM=1, WM=X Asynchronous Read Mode Operation RM=0, WM=0Read Operation 2.2 4-, 8-, 16-, 32-Word Linear Burst Read Operation Continuous Linear Burst Read OperationReserved area is not available on Synchronous read Programmable Burst Read Latency Operation Output Disable Mode OperationHandshaking Operation See Timing Diagram 6.6, 6.7 Synchronous WriteRM=1, WM=1 Data register Program OperationAddressing for program operation MLC Block Paired Page Address Information Paired Page Address Flash Memory Block including the page in error and copy If program operation results in an error, map outDBS, DFS is for DDP Target data to another block Interrupt register must not be written Program Interleave can work in Auto INTDBS, DFS is for DDP Cache Program Operation Sector0 Sector7 Last PGM? Cache Program Operation Flow DiagramProgram Error Add F101h DQ=DBS Add DataRAM DQ=Data4KB Interleave Cache Program Operation If program operation Results in an errorBlock Add F241h DQ=0000h DQ=Data Copy back completed Copy back ErrorCopy-Back Program Operation with Random Data Input Write ‘DFS , FBA’ o f Fla sh Erase Operation Erase ErrorBlock Erase Operation Add F100h DQ=DFS*, FBA Add F101h DQ=DBS Erase Interleave1 @DDP Flow ChartINT=1Ready Erase Error Add F101h DQ=DBS Add F241h DQ=5=EI Erase Suspend During a Block Erase Operation Erase Suspend / Erase Resume OperationErase Resume Partition Information PI Block SLC Only PI Block Boundary Information setting steps PI Block Boundary Information settingPI Block Boundary Information setting Flow Chart PI Block Access mode entry PI Block Access mode entry Flow Chart PI Block Erase PI Block Erase Operation Flow Chart In PI Block Access ModeErasing the PI Area Programming the PI Area PI Block Program OperationMemory location in the PI area can be program Locking the PI Update the PI Area PI UpdateAdd F241h DQ15=INT PI updated PI Block Load Operation OTP Operation SLC only OTP Block Area Structure 1st Block OTP Area Structure OTP Block Load Operation OTP Exit OTP Block Program Operation Programming the OTP Area Add DP DQ=Data-in OTP Block Program Operation Flow ChartDo Cold/Warm/Hot Nand Flash Core reset OTP Exit OTPL=0? YES Locking the OTP OTP Block Lock OperationOTP Lock Operation Steps Automatically Updated Add F241h DQ15=INT Do Cold resetAdd F241h DQ15=INT Write Data into DataRAM3 Add 1st Word Locking the 1st Block OTP 13.4 1st Block OTP Lock Operation1st Block OTP Lock Operation Steps 100 Locking the OTP and 1st Block OTP OTP and 1st Block OTP Lock OperationOTP and 1st Block OTP simultaneous Lock Operation Steps 102 DQ6 DQ5~DQ0 14 DQ6 Toggle BitStatus DQ15~DQ7 Progress Data Loading Don’t Care ECC Operation ECC Bypass Operation Invalid Block Operation Invalid Block Identification Table Operation Invalid Block Replacement Operation Invalid Block Table Creation Flow Chart Start 1st 1th Nth Block Replacement Operation SequenceBlock a 1st Block B 1th Nth 107 Operating Conditions Absolute Maximum RatingsKFM4GH6Q4M Parameter DC CharacteristicsTest Conditions Device Capacitance Valid Block CharacteristicsAC Test Conditions DDP QDP 66MHz 83MHz Unit AC Characteristics for Synchronous Burst ReadSee Timing Diagrams 6.1 Parameter Max Min KFKAGH6Q4MTBD AC Characteristics for Asynchronous ReadKFN8GH6Q4M Min Max AC Characteristics for Burst Write Operation AC Characteristics for Asynchronous WriteSee Timing Diagrams Parameter Symbol Min Max Unit 200 AC Characteristics for Load/Program/Erase PerformanceAC Characteristics for INT Auto Mode 114 CLK 8-Word Linear Burst Read Mode with Wrap AroundContinuous Linear Burst Read Mode with Wrap Around RDY Low See AC Characteristics Table DQ0 DQ15Asynchronous Read VA Transition Before Asynchronous Read VA Transition After AVD Low Valid WD Asynchronous WriteADQ15-ADQ0 Hi-Z ≈D7 8-Word Linear Burst Write ModeBurst Write Operation followed by Burst Read 118 Start Initial Burst Write Operation 119 Load Operation Timing See AC Characteristics .7 and TableLoad Command Sequence last two cycles Read Data Completed Da+n Superload Operation Timing Program Operation Timing Program Command Sequence last two cycles122 Timing Ongoing Status ADQ15 Interleave Cache Program OperationADQ0~ Ongoing Status INT bit Block Erase Operation Timing Erase Command Sequence125 Cold Reset Timing CE, OE Warm Reset Timing127 Flex-MuxOneNAND Hot Reset TimingADQi Flex-MuxOneNAND Operation or Idle Nand Flash Core reset Nand Flash Core Reset TimingData Protection Timing During Power Down ADQi RDY Status RD Hi-Z130 Write command into Command Register INT will automatically INT auto mode131 General Operation DQ type Methods of Determining Interrupt StatusINT Type Mono INT Type DDP 132 Asynchronous Mode Using the INT Pin Synchronous Mode Using the INT PinINT Pin to a Host General Purpose I/O Polling the Interrupt Register Status Bit 134 Determining Rp Value DDP, QDP Only INT pol = ‘High’ DefaultRpohm Ready INT pol = ‘Low’Vcc or Vccq Vss KFN8GH6Q4M @ Vcc = 1.8V, Ta = 25C , CL = 30pF Boot Sequence Boot SequenceBoot Loaders in Flex-MuxOneNAND Boot Loaders in Flex-MuxOneNAND Description BL1 NBL3BL2 NBL2 Last Block Address First Block Address Partition of Flex-MuxOneNANDMLC Partition +1 ~ n-1 Blocks Data Register DDPDual Die Package DDP and QDP DescriptionQDPQuad Die Package 8G product KFN8GH6Q4M 4G product KFM4GH6Q4M141 16G product KFKAGH6Q4M 142