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Samsung KFM4GH6Q4M Block384, Block416, Block385, Block417, Block386, Block418, Block387, Block419

Models: KFN8GH6Q4M KFM4GH6Q4M KFKAGH6Q4M

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	Flex-MuxOneNAND4G(KFM4GH6Q4M-DEBx)
	Flex-MuxOneNAND8G(KFN8GH6Q4M-DEBx)
	Flex-MuxOneNAND16G(KFKAGH6Q4M-DEBx)						FLASH MEMORY

	Block	Block Address	Page Address	Size	Block	Block Address	Page Address	Size
	Block	[F100h]	[F107h]	Size	Block	[F100h]	[F107h]	Size
		[F100h]	[F107h]			[F100h]	[F107h]
	Block384	0180h			Block416	01A0h

	Block385	0181h			Block417	01A1h

	Block386	0182h			Block418	01A2h

	Block387	0183h			Block419	01A3h

	Block388	0184h			Block420	01A4h

	Block389	0185h			Block421	01A5h

	Block390	0186h			Block422	01A6h

	Block391	0187h			Block423	01A7h

	Block392	0188h			Block424	01A8h

	Block393	0189h			Block425	01A9h

	Block394	018Ah			Block426	01AAh

	Block395	018Bh			Block427	01ABh

	Block396	018Ch			Block428	01ACh

	Block397	018Dh			Block429	01ADh

	Block398	018Eh	SLC:	SLC:	Block430	01AEh	SLC:	SLC:
			0000h~00FCh,	256KB,			0000h~00FCh,	256KB,
	Block399	018Fh	0000h~00FCh,	256KB,	Block431	01AFh	0000h~00FCh,	256KB,
	Block399	018Fh			Block431	01AFh

	Block400	0190h	MLC:	MLC:	Block432	01B0h	MLC:	MLC:
			MLC:	MLC:			MLC:	MLC:
	Block401	0191h	0000h~01FCh	512KB	Block433	01B1h	0000h~01FCh	512KB

	Block402	0192h			Block434	01B2h

	Block403	0193h			Block435	01B3h

	Block404	0194h			Block436	01B4h

	Block405	0195h			Block437	01B5h

	Block406	0196h			Block438	01B6h

	Block407	0197h			Block439	01B7h

	Block408	0198h			Block440	01B8h

	Block409	0199h			Block441	01B9h

	Block410	019Ah			Block442	01BAh

	Block411	019Bh			Block443	01BBh

	Block412	019Ch			Block444	01BCh

	Block413	019Dh			Block445	01BDh

	Block414	019Eh			Block446	01BEh

	Block415	019Fh			Block447	01BFh

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Image 20

Samsung KFM4GH6Q4M Block384, Block416, Block385, Block417, Block386, Block418, Block387, Block419, Block388, Block420

Contents

KFM4GH6Q4M KFN8GH6Q4M KFKAGH6Q4M Initial issue Revision No History Draft DateRemark Corrected errataOct Ordering Information General Overview Product Features Device ArchitectureDevice Performance System HardwareDetailed Product Description Definitions63ball, 10mm x 13mm x max 1.0mmt , 0.8mm ball pitch FBGA4Gb Pin Configuration1 4Gb KFM4GH6Q4M / 8Gb KFN8GH6Q4M 2 16Gb Product KFKAGH6Q4M TBD TOP VIEW, Balls Facing Down 63ball Fbga OneNAND ChipPin Description Multiplexed Address/Data busRegister read cycles InterruptBlock Diagram Memory Array OrganizationInternal Nand Array Memory Organization OTPBlockSLC SectorBlockMLC BootRAM 1KB DataRAM0 2KB DataRAM1 2KB Boot code Nand Array OTP BlockExternal BufferRAM Memory Internal Nand Array MemoryMemory Map Block Block Address Size0000h 256KBBlock Block Address Block128 Block160Block129 Block161Block238 00EEh Block240 00F0hBlock256 Block288 0120h Block257Block289 0121h Block258 Block290 0122h Block259Block320 Block352 0160h Block321Block353 0161h Block322 Block354 0162h Block323Block384 Block416Block385 Block417Block494 01EEh Block496 01F0hBlock512 Block544 0220h Block513Block545 0221h Block514 Block546 0222h Block515Block576 Block608 0260h Block577Block609 0261h Block578 Block610 0262h Block579Block640 Block672Block641 Block673Block750 02EEh Block752 02F0hBlock768 Block800 0320h Block769Block801 0321h Block770 Block802 0322h Block771Block832 Block864 0360h Block833Block865 0361h Block834 Block866 0362h Block835Block896 Block928Block897 Block929Block1006 03EEh Block1008 03F0hInternal Memory Spare Area Assignment Area256W ByteExternal Memory BufferRAM Address Map Division Address Size Usage DescriptionBootRAMMain area BootRAMSpare areaExternal Memory Map Detail Information DataRAMMain areaExternal Memory Spare Area Assignment Buf Word Byte4bit ECC parity values 8046h 1008Ch 8047h 1008Eh 10054h 802Bh 10056h 802Ch 10058h 802Dh10074h 803Bh 10076h 803Ch 10078h 803Dh DataS 10090h BIBad block Information10092h Managed by internal ECC logic 10094h 804Bh 10096h 804Ch 10098h 804DhAddress Name Host Description RegistersRegister Address Map Device ID Default Manufacturer ID Register F000h RDevice ID Register F001h R Device IdentificationThis register is reserved for future use Version ID Register F002hData Buffer Size Register F003h R Technology Register F006h R Boot Buffer Size Register F004h RAmount of Buffers Register F005h R 11~15 Start Address3~7 Register F102h~F106h Start Address1 Register F100h R/WStart Address2 Register F101h R/W Start Address8 Register F107h R/W Start Buffer Register F200h R/WSector allocation according to BSCCASE1 FSA=00 BSC = BSC =111Sector allocation according to BSCCASE2 FSA=01 BSC = Sector allocation according to BSCCASE3 FSA=10 BSC =Command Register F220h R/W AcceptableCMD OperationInterrupt Register Two Methods to Clear Interrupt Register in Command InputWrite command into INT will automatically System Configuration 1 Register F221h R, R/W BrwlBurst Length BL Burst LengthMain Burst LengthSpareBurst Length BL Information119 RDY Polarity RDYpol Information7Iobe Write Mode WM Write Mode Information1 Definition DescriptionMRSMode Register Setting Description BwpsSystem Configuration 2 Register F222h Controller Status Register F240h RPIL Otpl OtpblOtpl Rsti Interrupt Status Register F241h R/WINT WI Interrupt Status Conditions Default State Valid EI Interrupt Status Conditions Default State ValidRead Interrupt RI RI Interrupt Status ConditionsStart Block Address Register F24Ch R/W Start Block Address Register F24Dh R/WNand Flash Write Protection Status Register F24Eh R SBAECC Status Register 2 FF01h R FF01h, default = 0000h ECC Status Register 3 FF02h R FF02h, default = 0000hECC Status Register 4 FF03h R FF03h, default = 0000h ECC Status Register 1 FF00h RAdd Data 00E0h 0000h3 Read Identification Data XXXXh4 0090h Command Based OperationReset Flex-MuxOneNAND Add BP1 Data 00F0h Reset Flex-MuxOneNAND Command Load Data Into Buffer CommandRead Identification Data Command Identification Data Description Address Data OutCLK AVD Device Bus OperationOperation ADQ0~15 Reset Mode Operation BP-F0hCold Reset Mode Operation Warm Reset Mode OperationHot Reset Mode Operation Nand Flash Core Reset Mode OperationBootRAM Write Protection Operation Write Protection OperationNand Flash Array Write Protection Operation Nand Array Write Protection StatesUnlocked Unlock Command Sequence Unlocked All Block Unlock Command SequenceLocked Lock Command Sequence Unlocked Nand Array Write Protection StateNand Flash Array Write Protection State Diagram Locked-tight Lock-Tight Command SequenceStart block address+Lock-tight block command 002Ch Locked-tight Nand Array Write Protection StateSamsung strongly recommends to follow the above flow chart Lock/Unlock/Lock-TightError completedDBS, DFS is for DDP DQ10=0?All Block Unlock Completed Data Protection During Power Down Operation Load OperationSuperload Operation LSB Page Recovery Read Read Operation Asynchronous Read Mode Operation RM=0, WM=0Synchronous Read Mode Operation RM=1, WM=X Reserved area is not available on Synchronous read Continuous Linear Burst Read Operation2.2 4-, 8-, 16-, 32-Word Linear Burst Read Operation Handshaking Operation Output Disable Mode OperationProgrammable Burst Read Latency Operation See Timing Diagram 6.6, 6.7 Synchronous WriteRM=1, WM=1Program Operation Addressing for program operationData register MLC BlockPaired Page Address Information Paired Page AddressFlash Memory DBS, DFS is for DDP Target data to another block If program operation results in an error, map outBlock including the page in error and copy DBS, DFS is for DDP Program Interleave can work in Auto INTInterrupt register must not be written Cache Program Operation Sector0 Sector7Cache Program Operation Flow Diagram Program ErrorLast PGM? Add F101h DQ=DBS Add DataRAM DQ=Data4KBInterleave Cache Program Operation Block Results in an errorIf program operation Copy back completed Copy back Error Copy-Back Program Operation with Random Data InputAdd F241h DQ=0000h DQ=Data Write ‘DFS , FBA’ o f Fla shBlock Erase Operation Erase ErrorErase Operation Erase Interleave1 @DDP Flow Chart INT=1Ready Erase ErrorAdd F100h DQ=DFS*, FBA Add F101h DQ=DBS Add F101h DQ=DBS Add F241h DQ=5=EIErase Resume Erase Suspend / Erase Resume OperationErase Suspend During a Block Erase Operation Partition Information PI Block SLC Only PI Block Boundary Information setting Flow Chart PI Block Boundary Information settingPI Block Boundary Information setting steps PI Block Access mode entry PI Block Access mode entry Flow ChartErasing the PI Area PI Block Erase Operation Flow Chart In PI Block Access ModePI Block Erase PI Block Program Operation Memory location in the PI area can be programProgramming the PI Area Locking the PIAdd F241h DQ15=INT PI updated PI UpdateUpdate the PI Area PI Block Load Operation OTP Operation SLC only OTP Block Area Structure 1st Block OTP Area StructureOTP Block Load Operation OTP ExitOTP Block Program Operation Programming the OTP AreaOTP Block Program Operation Flow Chart Do Cold/Warm/Hot Nand Flash Core reset OTP ExitAdd DP DQ=Data-in OTPL=0? YESOTP Lock Operation Steps OTP Block Lock OperationLocking the OTP Add F241h DQ15=INT Write Data into DataRAM3 Add 1st Word Add F241h DQ15=INT Do Cold resetAutomatically Updated 1st Block OTP Lock Operation Steps 13.4 1st Block OTP Lock OperationLocking the 1st Block OTP 100 OTP and 1st Block OTP simultaneous Lock Operation Steps OTP and 1st Block OTP Lock OperationLocking the OTP and 1st Block OTP 102 14 DQ6 Toggle Bit Status DQ15~DQ7DQ6 DQ5~DQ0 Progress Data Loading Don’t CareECC Operation ECC Bypass OperationInvalid Block Operation Invalid Block Identification Table OperationInvalid Block Replacement Operation Invalid Block Table Creation Flow Chart StartBlock Replacement Operation Sequence Block a1st 1th Nth 1st Block B 1th Nth 107KFM4GH6Q4M Absolute Maximum RatingsOperating Conditions Test Conditions DC CharacteristicsParameter Valid Block Characteristics AC Test ConditionsDevice Capacitance DDP QDPAC Characteristics for Synchronous Burst Read See Timing Diagrams 6.1 Parameter66MHz 83MHz Unit Max MinAC Characteristics for Asynchronous Read KFN8GH6Q4MKFKAGH6Q4MTBD Min MaxSee Timing Diagrams Parameter Symbol Min Max Unit AC Characteristics for Asynchronous WriteAC Characteristics for Burst Write Operation AC Characteristics for Load/Program/Erase Performance AC Characteristics for INT Auto Mode200 1148-Word Linear Burst Read Mode with Wrap Around Continuous Linear Burst Read Mode with Wrap AroundCLK RDYSee AC Characteristics Table DQ0 DQ15 Asynchronous Read VA Transition BeforeLow Asynchronous Read VA Transition After AVD LowAsynchronous Write ADQ15-ADQ0Valid WD Hi-Z8-Word Linear Burst Write Mode Burst Write Operation followed by Burst Read≈D7 118Start Initial Burst Write Operation 119See AC Characteristics .7 and Table Load Command Sequence last two cycles Read DataLoad Operation Timing Completed Da+nSuperload Operation Timing 122 Program Command Sequence last two cyclesProgram Operation Timing Timing Ongoing StatusInterleave Cache Program Operation ADQ0~ADQ15 Ongoing Status INT bit125 Erase Command SequenceBlock Erase Operation Timing Cold Reset Timing 127 Warm Reset TimingCE, OE ADQi Hot Reset TimingFlex-MuxOneNAND Nand Flash Core Reset Timing Data Protection Timing During Power DownFlex-MuxOneNAND Operation or Idle Nand Flash Core reset ADQi130 Status RD Hi-ZRDY 131 INT auto modeWrite command into Command Register INT will automatically Methods of Determining Interrupt Status INT Type Mono INT Type DDPGeneral Operation DQ type 132INT Pin to a Host General Purpose I/O Synchronous Mode Using the INT PinAsynchronous Mode Using the INT Pin Polling the Interrupt Register Status Bit 134Rpohm INT pol = ‘High’ DefaultDetermining Rp Value DDP, QDP Only INT pol = ‘Low’ Vcc or VccqReady Vss KFN8GH6Q4M @ Vcc = 1.8V, Ta = 25C , CL = 30pFBoot Sequence Boot Loaders in Flex-MuxOneNANDBoot Sequence Boot Loaders in Flex-MuxOneNAND DescriptionNBL3 BL2BL1 NBL2Partition of Flex-MuxOneNAND MLC Partition +1 ~ n-1 BlocksLast Block Address First Block Address Data RegisterQDPQuad Die Package DDP and QDP DescriptionDDPDual Die Package 141 4G product KFM4GH6Q4M8G product KFN8GH6Q4M 16G product KFKAGH6Q4M 142