Samsung KFM4GH6Q4M AC Test Conditions, Device Capacitance, Valid Block Characteristics, Ddp Qdp

Flex-MuxOneNAND4G(KFM4GH6Q4M-DEBx)
Flex-MuxOneNAND8G(KFN8GH6Q4M-DEBx)
Flex-MuxOneNAND16G(KFKAGH6Q4M-DEBx)	FLASH MEMORY

5.0 AC CHARACTERISTICS

5.1 AC Test Conditions

Parameter		Value (66MHz)	Value (83MHz)
Input Pulse Levels		0V to VCC	0V to VCC
Input Rise and Fall Times	CLK	3ns	2ns
	other inputs	5ns	2ns
Input and Output Timing Levels		VCC/2	VCC/2
Output Load		CL = 30pF	CL = 30pF

VCC

VCC/2	Input & Output	VCC/2
	Test Point

0V

Input Pulse and Test Point

Device

Under

Test

* CL = 30pF including scope and Jig capacitance

Output Load

5.2 Device Capacitance

CAPACITANCE(TA = 25 °C, VCC = 1.8V, f = 1.0MHz)

Item	Symbol	Test Condition	Single			DDP			QDP		Unit
			Min	Max	Min		Max	Min		Max
Input Capacitance	CIN1	VIN=0V	-	10	-		20	-		40
Control Pin Capacitance	CIN2	VIN=0V	-	10	-		20	-		40	pF
Output Capacitance	COUT	VOUT=0V	-	10	-		20	-		40
INT Capacitance	CINT	VOUT=0V	-	10	-		20	-		40

NOTE :

1) Capacitance is periodically sampled and not 100% tested.

5.3 Valid Block Characteristics

Parameter		Symbol	Min	Typ.	Max	Unit
	Single		998	-	1024
Valid Block Number	DDP	NVB	1996	-	2048	Blocks
	QDP		3993	-	4096

NOTE :

1)The device may include invalid blocks when first shipped. Additional invalid blocks may develop while being used. The number of valid blocks is presented with both cases of invalid blocks considered. Invalid blocks are defined as blocks that contain five or more bad bits which cause status failure during Program and Erase operation. Do not erase or program factory-marked bad blocks.

2)The 1st block, which is placed on 00h block address, is guaranteed to be a valid block up to 1K program/erase cycles with 4bit/528Byte ECC.

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