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Samsung KFKAGH6Q4M, KFM4GH6Q4M, KFN8GH6Q4M 6.11 Program Operation Timing

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Flex-MuxOneNAND4G(KFM4GH6Q4M-DEBx)

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FLASH MEMORY

Flex-MuxOneNAND8G(KFN8GH6Q4M-DEBx)

Flex-MuxOneNAND16G(KFKAGH6Q4M-DEBx)

6.11 Program Operation Timing

See AC Characteristics Table 5.7 and Table 5.9

NOTE :

1) AA = Address of address register

CA = Address of command register

PCD = Program Command

PMA = Address of memory to be programmed

BA = Address of BufferRAM to write the data

BD = Program Data

SA = Address of status register

2) “In progress” and “complete” refer to status register

3) Status reads in this figure is asynchronous read, but status read in synchronous mode is also supported.

Program Command Sequence (last two cycles)

CLK

tDS tDH

tCH

tWPL

tCS

tWPH

tWC

SA SA

Progress Completed

Read Status Data

VIL

AVD

BA CA PCDPMA BD

tAAVDH

tAAVDS

INT

tAVDP tWEA

tCER

A/DQ0:

A/DQ15

RDY Hi-Z

tCER

tCEZ

bit

tCEZ

≈ ≈≈ ≈ ≈ ≈

tPGM1 or tPGM2

Contents

Main Flex-MuxOneNAND16G(KFKAGH6Q4M-DEBx) KFM4GH6Q4M KFN8GH6Q4M KFKAGH6Q4M 4Gb Flex-MuxOneNAND M-die Revision History Document Title Flex-MuxOneNAND Revision History Revision No. Revision History Revision No. History Draft Date Remark 1.0 INTRODUCTION K F x x H 6 Q 4 M - D E x x 1.2 General Overview Flex-MuxOneNAND4G(KFM4GH6Q4M-DEBx) Flex-MuxOneNAND8G(KFN8GH6Q4M-DEBx) Flex-MuxOneNAND16G(KFKAGH6Q4M-DEBx) 1.3 Product Features 2.0 DEVICE DESCRIPTION 2.1 Detailed Product Description 2.2 Definitions Flex-MuxOneNAND8G(KFN8GH6Q4M-DEBx) 2.3 Pin Configuration 2.3.1 4Gb (KFM4GH6Q4M) / 8Gb (KFN8GH6Q4M) 2.3.2 16Gb Product (KFKAGH6Q4M) (TBD) 2.4 Pin Description ADQ15~ADQ0 I/O Interrupt 2.5 Block Diagram 2.6 Memory Array Organization 2.6.1 Internal (NAND Array) Memory Organization Sector Block(MLC) Page Block(SLC) 2.6.2 External (BufferRAM) Memory Organization { Nand Array { Host OTP Block 2.7 Memory Map 2.7.1 Internal (NAND Array) Memory Organization Page Flex-MuxOneNAND16G(KFKAGH6Q4M-DEBx) Page Page Page Page Page Page Page Page Page Page Page Page Page 2.7.2 Internal Memory Spare Area Assignment 2.7.3 External Memory (BufferRAM) Address Map 2.7.4 External Memory Map Detail Information 2.7.5 External Memory Spare Area Assignment Page Page 2.8 Registers 2.8.1 Register Address Map 2.8.2 Manufacturer ID Register F000h (R) 2.8.3 Device ID Register F001h (R) Page 2.8.6 Boot Buffer Size Register F004h (R) 2.8.7 Amount of Buffers Register F005h (R) 2.8.8 Technology Register F006h (R) 2.8.9 Start Address1 Register F100h (R/W) 2.8.10 Start Address2 Register F101h (R/W) 2.8.11~15 Start Address3~7 Register F102h~F106h 2.8.16 Start Address8 Register F107h (R/W) 2.8.17 Start Buffer Register F200h (R/W) Page 2.8.18 Command Register F220h (R/W) 2.8.18.1 Two Methods to Clear Interrupt Register in Command Input 2.8.19 System Configuration 1 Register F221h (R, R/W) Page Page Page 2.8.20 System Configuration 2 Register F222h 2.8.21 Controller Status Register F240h (R) Page 2.8.22 Interrupt Status Register F241h (R/W) Page 2.8.23 Start Block Address Register F24Ch (R/W) 2.8.24 Start Block Address Register F24Dh (R/W) 2.8.25 NAND Flash Write Protection Status Register F24Eh (R) 2.8.26 ECC Status Register 1 FF00h (R) 2.8.27 ECC Status Register 2 FF01h (R) 2.8.28 ECC Status Register 3 FF02h (R) 2.8.29 ECC Status Register 4 FF03h (R) 3.0 DEVICE OPERATION 3.1 Command Based Operation 3.1.1 Reset Flex-MuxOneNAND Command 3.1.2 Load Data Into Buffer Command 3.1.3 Read Identification Data Command 3.2 Device Bus Operation 3.3 Reset Mode Operation 3.3.1 Cold Reset Mode Operation 3.3.2 Warm Reset Mode Operation 3.3.3 Hot Reset Mode Operation 3.3.4 NAND Flash Core Reset Mode Operation 3.4 Write Protection Operation 3.4.1 BootRAM Write Protection Operation 3.4.2 NAND Flash Array Write Protection Operation 3.4.3 NAND Array Write Protection States 3.4.3.1 Unlocked NAND Array Write Protection State 3.4.3.2 Locked NAND Array Write Protection State 3.4.3.3 Locked-tight NAND Array Write Protection State 3.4.4 NAND Flash Array Write Protection State Diagram * Samsung strongly recommends to follow the above flow chart *Samsung strongly recommends to follow the above flow chart 3.5 Data Protection During Power Down Operation 3.6 Load Operation 3.6.1 Superload Operation 3.6.2 LSB Page Recovery Read 3.7 Read Operation 3.7.1 Asynchronous Read Mode Operation (RM=0, WM=0) 3.7.2 Synchronous Read Mode Operation (RM=1, WM=X) 3.7.2.1 Continuous Linear Burst Read Operation 3.7.2.2 4-, 8-, 16-, 32-Word Linear Burst Read Operation 3.7.2.3 Programmable Burst Read Latency Operation 3.7.3 Handshaking Operation 3.7.4 Output Disable Mode Operation Page 3.9 Program Operation Page . . . target data to another block. Program Interleave(@DDP) Flow Chart { } 3* * 3.9.1 Cache Program Operation Page 3.9.2 Interleave Cache Program Operation * 3.10 Copy-Back Program Operation with Random Data Input 3.11 Erase Operation 3.11.1 Block Erase Operation { } * { 3.11.2 Erase Suspend / Erase Resume Operation 3.12 Partition Information (PI) Block (SLC Only) SLC area (Default) SLC area [NAND Flash Array] MLC area 3.12.1 PI Block Boundary Information setting Start 3.12.1.1 PI Block Access mode entry * DBS, DFS is for DDP 3.12.1.2 PI Block Erase * DBS, DFS is for DDP 3.12.1.3 PI Block Program Operation 3.12.1.4 PI Update 3.12.2 PI Block Load Operation } Add: F220h 3.13 OTP Operation (SLC only) Page 3.13.1 OTP Block Load Operation Add: F220h Page Page 3.13.3 OTP Block Lock Operation Page 3.13.4 1st Block OTP Lock Operation Page 3.13.5 OTP and 1st Block OTP Lock Operation Page Page 3.15 ECC Operation 3.15.1 ECC Bypass Operation Page 3.16.2 Invalid Block Replacement Operation { { 4.0 DC CHARACTERISTICS 4.1 Absolute Maximum Ratings 4.2 Operating Conditions 4.3 DC Characteristics 5.0 AC CHARACTERISTICS 5.1 AC Test Conditions 5.2 Device Capacitance CAPACITANCE 5.3 Valid Block Characteristics 5.4 AC Characteristics for Synchronous Burst Read 5.5 AC Characteristics for Asynchronous Read 5.6 AC Characteristics for Warm Reset (RP), Hot Reset and NAND Flash Core Reset 5.7 AC Characteristics for Asynchronous Write 5.8 AC Characteristics for Burst Write Operation 5.9 AC Characteristics for Load/Program/Erase Performance 5.10 AC Characteristics for INT Auto Mode 6.0 TIMING DIAGRAMS 6.1 8-Word Linear Burst Read Mode with Wrap Around 6.2 Continuous Linear Burst Read Mode with Wrap Around 6.3 Asynchronous Read (VA Transition Before AVD Low) 6.4 Asynchronous Read (VA Transition After AVD Low) 6.5 Asynchronous Write 6.6 8-Word Linear Burst Write Mode 6.7 Burst Write Operation followed by Burst Read 6.8 Start Initial Burst Write Operation 6.9 Load Operation Timing 6.10 Superload Operation Timing 6.11 Program Operation Timing 6.12 Cache Program Operation Timing ...... Status Ongoing INT ADQ15 { { 6.14 Block Erase Operation Timing 6.15 Cold Reset Timing 6.16 Warm Reset Timing 6.17 Hot Reset Timing RDY Operation or Idle Flex-MuxOneNAND reset Idle Flex-MuxOneNAND Operation 6.18 NAND Flash Core Reset Timing 6.19 Data Protection Timing During Power Down 6.20 Toggle Bit Timing in Asynchronous Read (VA Transition Before AVD Low) 6.21 Toggle Bit Timing in Asynchronous Read (VA Transition After AVD Low) Page 7.0 TECHNICAL AND APPLICATION NOTES 7.1 Methods of Determining Interrupt Status 7.1.1 The INT Pin to a Host General Purpose I/O INT COMMAND 7.1.2 Polling the Interrupt Register Status Bit INT 7.1.3 Determining Rp Value (DDP, QDP Only) INT pol = High (Default) INT pol = Low 7.2 Boot Sequence 7.2.1 Boot Loaders in Flex-MuxOneNAND 7.2.2 Boot Sequence Partition of NAND Flash array Internal BufferRAM NAND Flash Array Flex-MuxOneNAND Boot Sequence 7.3 Partition of Flex-MuxOneNAND { { { : : 7.4 DDP and QDP Description DDP(Dual Die Package): QDP(Quad Die Package): 8.0 PACKAGE DIMENSIONS (TBD) 4G product (KFM4GH6Q4M) 8G product (KFN8GH6Q4M) 16G product (KFKAGH6Q4M)