Asynchronous Read VA Transition Before, Low

Flex-MuxOneNAND4G(KFM4GH6Q4M-DEBx)
Flex-MuxOneNAND8G(KFN8GH6Q4M-DEBx)
Flex-MuxOneNAND16G(KFKAGH6Q4M-DEBx)			FLASH MEMORY

6.3 Asynchronous Read (VA Transition Before	AVD	Low)
See AC Characteristics Table 5.5

A/DQ0:

A/DQ15

AVD

RDY Hi-Z

	tRC
tCER	tOE
	tOE
tCA	tAVDO		tCEZ
tCA	tCE		tOEZ
	tCE

VA		Valid RD	Hi-Z
VA		Valid RD
tAAVDH
tAAVDS
tWEA	tAVDP
	tAVDP
	tAA		Hi-Z
			Hi-Z

NOTE :

VA=Valid Read Address, RD=Read Data.

See timing diagram 6.20, 6.21 for tASO

6.4 Asynchronous Read (VA Transition After AVD Low)

See AC Characteristics Table 5.5

		tRC
CE
	tCER	tOE
OE				tCEZ
WE	tAVDO	tCE		tOEZ
WE	tCA	tCE


A/DQ0:	VA		Valid RD	Hi-Z
A/DQ15	VA		Valid RD
A/DQ15
	tACC
	tAAVDS	tAAVDH
AVD	tWEA
AVD
RDY Hi-Z	tAVDP			Hi-Z
RDY Hi-Z				Hi-Z

NOTE :

VA=Valid Read Address, RD=Read Data.

See timing diagram 6.21, 6.22 for tASO

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Samsung KFM4GH6Q4M, KFN8GH6Q4M Asynchronous Read VA Transition Before, Asynchronous Read VA Transition After AVD Low

Contents

KFM4GH6Q4M KFN8GH6Q4M KFKAGH6Q4M Initial issue Revision No History Draft DateRemark Corrected errata Oct Ordering Information General Overview Product Features Device ArchitectureDevice Performance System Hardware Detailed Product Description Definitions 63ball, 10mm x 13mm x max 1.0mmt , 0.8mm ball pitch FBGA4Gb Pin Configuration1 4Gb KFM4GH6Q4M / 8Gb KFN8GH6Q4M 2 16Gb Product KFKAGH6Q4M TBD TOP VIEW, Balls Facing Down 63ball Fbga OneNAND Chip Pin Description Multiplexed Address/Data busRegister read cycles Interrupt Block Diagram Memory Array OrganizationInternal Nand Array Memory Organization OTP BlockSLC SectorBlockMLC BootRAM 1KB DataRAM0 2KB DataRAM1 2KB Boot code Nand Array OTP BlockExternal BufferRAM Memory Internal Nand Array Memory Memory Map Block Block Address Size0000h 256KB Block Block Address Block128 Block160Block129 Block161 Block238 00EEh Block240 00F0h Block256 Block288 0120h Block257Block289 0121h Block258 Block290 0122h Block259 Block320 Block352 0160h Block321Block353 0161h Block322 Block354 0162h Block323 Block384 Block416Block385 Block417 Block494 01EEh Block496 01F0h Block512 Block544 0220h Block513Block545 0221h Block514 Block546 0222h Block515 Block576 Block608 0260h Block577Block609 0261h Block578 Block610 0262h Block579 Block640 Block672Block641 Block673 Block750 02EEh Block752 02F0h Block768 Block800 0320h Block769Block801 0321h Block770 Block802 0322h Block771 Block832 Block864 0360h Block833Block865 0361h Block834 Block866 0362h Block835 Block896 Block928Block897 Block929 Block1006 03EEh Block1008 03F0h Internal Memory Spare Area Assignment Area256W Byte External Memory BufferRAM Address Map Division Address Size Usage Description BootRAMMain area BootRAMSpare areaExternal Memory Map Detail Information DataRAMMain area External Memory Spare Area Assignment Buf Word Byte 4bit ECC parity values 8046h 1008Ch 8047h 1008Eh 10054h 802Bh 10056h 802Ch 10058h 802Dh10074h 803Bh 10076h 803Ch 10078h 803Dh DataS 10090h BIBad block Information10092h Managed by internal ECC logic 10094h 804Bh 10096h 804Ch 10098h 804Dh Address Name Host Description RegistersRegister Address Map Device ID Default Manufacturer ID Register F000h RDevice ID Register F001h R Device Identification This register is reserved for future use Version ID Register F002hData Buffer Size Register F003h R Technology Register F006h R Boot Buffer Size Register F004h RAmount of Buffers Register F005h R 11~15 Start Address3~7 Register F102h~F106h Start Address1 Register F100h R/WStart Address2 Register F101h R/W Start Address8 Register F107h R/W Start Buffer Register F200h R/W Sector allocation according to BSCCASE1 FSA=00 BSC = BSC =111Sector allocation according to BSCCASE2 FSA=01 BSC = Sector allocation according to BSCCASE3 FSA=10 BSC = Command Register F220h R/W AcceptableCMD Operation Interrupt Register Two Methods to Clear Interrupt Register in Command InputWrite command into INT will automatically System Configuration 1 Register F221h R, R/W Brwl Burst Length BL Burst LengthMain Burst LengthSpareBurst Length BL Information119 RDY Polarity RDYpol Information7 Iobe Write Mode WM Write Mode Information1 Definition DescriptionMRSMode Register Setting Description Bwps System Configuration 2 Register F222h Controller Status Register F240h RPIL Otpl Otpbl Otpl Rsti Interrupt Status Register F241h R/WINT WI Interrupt Status Conditions Default State Valid EI Interrupt Status Conditions Default State ValidRead Interrupt RI RI Interrupt Status Conditions Start Block Address Register F24Ch R/W Start Block Address Register F24Dh R/WNand Flash Write Protection Status Register F24Eh R SBA ECC Status Register 2 FF01h R FF01h, default = 0000h ECC Status Register 3 FF02h R FF02h, default = 0000hECC Status Register 4 FF03h R FF03h, default = 0000h ECC Status Register 1 FF00h R Add Data 00E0h 0000h3 Read Identification Data XXXXh4 0090h Command Based OperationReset Flex-MuxOneNAND Add BP1 Data 00F0h Reset Flex-MuxOneNAND Command Load Data Into Buffer CommandRead Identification Data Command Identification Data Description Address Data Out CLK AVD Device Bus OperationOperation ADQ0~15 Reset Mode Operation BP-F0h Cold Reset Mode Operation Warm Reset Mode OperationHot Reset Mode Operation Nand Flash Core Reset Mode Operation BootRAM Write Protection Operation Write Protection OperationNand Flash Array Write Protection Operation Nand Array Write Protection States Unlocked Unlock Command Sequence Unlocked All Block Unlock Command SequenceLocked Lock Command Sequence Unlocked Nand Array Write Protection State Nand Flash Array Write Protection State Diagram Locked-tight Lock-Tight Command SequenceStart block address+Lock-tight block command 002Ch Locked-tight Nand Array Write Protection State Samsung strongly recommends to follow the above flow chart Lock/Unlock/Lock-TightError completedDBS, DFS is for DDP DQ10=0? All Block Unlock Completed Data Protection During Power Down Operation Load Operation Superload Operation LSB Page Recovery Read Read Operation Asynchronous Read Mode Operation RM=0, WM=0Synchronous Read Mode Operation RM=1, WM=X Reserved area is not available on Synchronous read Continuous Linear Burst Read Operation2.2 4-, 8-, 16-, 32-Word Linear Burst Read Operation Handshaking Operation Output Disable Mode OperationProgrammable Burst Read Latency Operation See Timing Diagram 6.6, 6.7 Synchronous WriteRM=1, WM=1 Program Operation Addressing for program operationData register MLC Block Paired Page Address Information Paired Page Address Flash Memory DBS, DFS is for DDP Target data to another block If program operation results in an error, map outBlock including the page in error and copy DBS, DFS is for DDP Program Interleave can work in Auto INTInterrupt register must not be written Cache Program Operation Sector0 Sector7 Cache Program Operation Flow Diagram Program ErrorLast PGM? Add F101h DQ=DBS Add DataRAM DQ=Data4KB Interleave Cache Program Operation Block Results in an errorIf program operation Copy back completed Copy back Error Copy-Back Program Operation with Random Data InputAdd F241h DQ=0000h DQ=Data Write ‘DFS , FBA’ o f Fla sh Block Erase Operation Erase ErrorErase Operation Erase Interleave1 @DDP Flow Chart INT=1Ready Erase ErrorAdd F100h DQ=DFS*, FBA Add F101h DQ=DBS Add F101h DQ=DBS Add F241h DQ=5=EI Erase Resume Erase Suspend / Erase Resume OperationErase Suspend During a Block Erase Operation Partition Information PI Block SLC Only PI Block Boundary Information setting Flow Chart PI Block Boundary Information settingPI Block Boundary Information setting steps PI Block Access mode entry PI Block Access mode entry Flow Chart Erasing the PI Area PI Block Erase Operation Flow Chart In PI Block Access ModePI Block Erase PI Block Program Operation Memory location in the PI area can be programProgramming the PI Area Locking the PI Add F241h DQ15=INT PI updated PI UpdateUpdate the PI Area PI Block Load Operation OTP Operation SLC only OTP Block Area Structure 1st Block OTP Area Structure OTP Block Load Operation OTP Exit OTP Block Program Operation Programming the OTP Area OTP Block Program Operation Flow Chart Do Cold/Warm/Hot Nand Flash Core reset OTP ExitAdd DP DQ=Data-in OTPL=0? YES OTP Lock Operation Steps OTP Block Lock OperationLocking the OTP Add F241h DQ15=INT Write Data into DataRAM3 Add 1st Word Add F241h DQ15=INT Do Cold resetAutomatically Updated 1st Block OTP Lock Operation Steps 13.4 1st Block OTP Lock OperationLocking the 1st Block OTP 100 OTP and 1st Block OTP simultaneous Lock Operation Steps OTP and 1st Block OTP Lock OperationLocking the OTP and 1st Block OTP 102 14 DQ6 Toggle Bit Status DQ15~DQ7DQ6 DQ5~DQ0 Progress Data Loading Don’t Care ECC Operation ECC Bypass Operation Invalid Block Operation Invalid Block Identification Table Operation Invalid Block Replacement Operation Invalid Block Table Creation Flow Chart Start Block Replacement Operation Sequence Block a1st 1th Nth 1st Block B 1th Nth 107 KFM4GH6Q4M Absolute Maximum RatingsOperating Conditions Test Conditions DC CharacteristicsParameter Valid Block Characteristics AC Test ConditionsDevice Capacitance DDP QDP AC Characteristics for Synchronous Burst Read See Timing Diagrams 6.1 Parameter66MHz 83MHz Unit Max Min AC Characteristics for Asynchronous Read KFN8GH6Q4MKFKAGH6Q4MTBD Min Max See Timing Diagrams Parameter Symbol Min Max Unit AC Characteristics for Asynchronous WriteAC Characteristics for Burst Write Operation AC Characteristics for Load/Program/Erase Performance AC Characteristics for INT Auto Mode200 114 8-Word Linear Burst Read Mode with Wrap Around Continuous Linear Burst Read Mode with Wrap AroundCLK RDY See AC Characteristics Table DQ0 DQ15 Asynchronous Read VA Transition BeforeLow Asynchronous Read VA Transition After AVD Low Asynchronous Write ADQ15-ADQ0Valid WD Hi-Z 8-Word Linear Burst Write Mode Burst Write Operation followed by Burst Read≈D7 118 Start Initial Burst Write Operation 119 See AC Characteristics .7 and Table Load Command Sequence last two cycles Read DataLoad Operation Timing Completed Da+n Superload Operation Timing 122 Program Command Sequence last two cyclesProgram Operation Timing Timing Ongoing Status Interleave Cache Program Operation ADQ0~ADQ15 Ongoing Status INT bit 125 Erase Command SequenceBlock Erase Operation Timing Cold Reset Timing 127 Warm Reset TimingCE, OE ADQi Hot Reset TimingFlex-MuxOneNAND Nand Flash Core Reset Timing Data Protection Timing During Power DownFlex-MuxOneNAND Operation or Idle Nand Flash Core reset ADQi 130 Status RD Hi-ZRDY 131 INT auto modeWrite command into Command Register INT will automatically Methods of Determining Interrupt Status INT Type Mono INT Type DDPGeneral Operation DQ type 132 INT Pin to a Host General Purpose I/O Synchronous Mode Using the INT PinAsynchronous Mode Using the INT Pin Polling the Interrupt Register Status Bit 134 Rpohm INT pol = ‘High’ DefaultDetermining Rp Value DDP, QDP Only INT pol = ‘Low’ Vcc or VccqReady Vss KFN8GH6Q4M @ Vcc = 1.8V, Ta = 25C , CL = 30pF Boot Sequence Boot Loaders in Flex-MuxOneNANDBoot Sequence Boot Loaders in Flex-MuxOneNAND Description NBL3 BL2BL1 NBL2 Partition of Flex-MuxOneNAND MLC Partition +1 ~ n-1 BlocksLast Block Address First Block Address Data Register QDPQuad Die Package DDP and QDP DescriptionDDPDual Die Package 141 4G product KFM4GH6Q4M8G product KFN8GH6Q4M 16G product KFKAGH6Q4M 142

Samsung KFM4GH6Q4M, KFN8GH6Q4M, KFKAGH6Q4M warranty Asynchronous Read VA Transition Before, Low

Models: KFN8GH6Q4M KFM4GH6Q4M KFKAGH6Q4M

FLASH MEMORY

6.3 Asynchronous Read (VA Transition Before

Low)

See AC Characteristics Table 5.5

A/DQ0:

A/DQ15

RDY Hi-Z

6.4 Asynchronous Read (VA Transition After AVD Low)

RDY Hi-Z