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Samsung KFKAGH6Q4M, KFN8GH6Q4M, KFM4GH6Q4M Burst Length BL, Burst LengthMain Burst LengthSpare

Models: KFN8GH6Q4M KFM4GH6Q4M KFKAGH6Q4M

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Flex-MuxOneNAND4G(KFM4GH6Q4M-DEBx)
Flex-MuxOneNAND8G(KFN8GH6Q4M-DEBx)
Flex-MuxOneNAND16G(KFKAGH6Q4M-DEBx)	FLASH MEMORY

Burst Length (BL)

Host must follow burst length set by BL when reading data in synchronous burst read.

BL			Burst Length(Main)			Burst Length(Spare)
000				Continuous(Default)1)
001					4 words

010					8 words

011					16 words

100			32 words			N/A

101~111					Reserved

NOTE :
1) In case of BootRAM : Main=512word, Spare=16word
In case of DataRAM : Main=1Kword, Spare=32word
Burst Length (BL) Information[11:9]
Item		Definition				Description
				Specifies the size of the burst length during a synchronous
BL		Burst Length		linear burst read and wrap around. And also burst length during a
					synchronous linear burst write

Error Correction Code (ECC) Information[8]

Item			Definition			Description
ECC		Error Correction Code Operation				0 = with correction (default)
ECC		Error Correction Code Operation				1 = without correction (bypassed)
						1 = without correction (bypassed)

RDY Polarity (RDYpol) Information[7]

Item			Definition			Description
RDYpol			RDY signal polarity			1 = high for ready (default)
RDYpol			RDY signal polarity			0 = low for ready
						0 = low for ready
INT Polarity (INTpol) Information[6]
INTpol		INT bit of Interrupt Status Register				INT Pin output
0			0 (busy)			High

			1 (ready)			Low
			1 (ready)			Low

1 (default)			0 (busy)			Low

			1 (ready)			High
			1 (ready)			High

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Samsung KFKAGH6Q4M, KFN8GH6Q4M, KFM4GH6Q4M warranty Burst LengthMain Burst LengthSpare, Burst Length BL Information119

Contents

KFM4GH6Q4M KFN8GH6Q4M KFKAGH6Q4M Remark Initial issueRevision No History Draft Date Corrected errataOct Ordering Information General Overview Device Performance Product FeaturesDevice Architecture System HardwareDetailed Product Description Definitions1 4Gb KFM4GH6Q4M / 8Gb KFN8GH6Q4M Pin Configuration63ball, 10mm x 13mm x max 1.0mmt , 0.8mm ball pitch FBGA4Gb 2 16Gb Product KFKAGH6Q4M TBD TOP VIEW, Balls Facing Down 63ball Fbga OneNAND ChipRegister read cycles Pin DescriptionMultiplexed Address/Data bus InterruptInternal Nand Array Memory Organization Block DiagramMemory Array Organization OTPBlockMLC SectorBlockSLC External BufferRAM Memory BootRAM 1KB DataRAM0 2KB DataRAM1 2KBBoot code Nand Array OTP Block Internal Nand Array Memory0000h Memory MapBlock Block Address Size 256KBBlock Block Address Block129 Block128Block160 Block161Block238 00EEh Block240 00F0hBlock289 0121h Block258 Block256Block288 0120h Block257 Block290 0122h Block259Block353 0161h Block322 Block320Block352 0160h Block321 Block354 0162h Block323Block385 Block384Block416 Block417Block494 01EEh Block496 01F0hBlock545 0221h Block514 Block512Block544 0220h Block513 Block546 0222h Block515Block609 0261h Block578 Block576Block608 0260h Block577 Block610 0262h Block579Block641 Block640Block672 Block673Block750 02EEh Block752 02F0hBlock801 0321h Block770 Block768Block800 0320h Block769 Block802 0322h Block771Block865 0361h Block834 Block832Block864 0360h Block833 Block866 0362h Block835Block897 Block896Block928 Block929Block1006 03EEh Block1008 03F0h256W Internal Memory Spare Area AssignmentArea ByteExternal Memory BufferRAM Address Map Division Address Size Usage DescriptionExternal Memory Map Detail Information BootRAMMain areaBootRAMSpare area DataRAMMain areaExternal Memory Spare Area Assignment Buf Word Byte10074h 803Bh 10076h 803Ch 10078h 803Dh 10054h 802Bh 10056h 802Ch 10058h 802Dh4bit ECC parity values 8046h 1008Ch 8047h 1008Eh 10092h Managed by internal ECC logic DataS10090h BIBad block Information 10094h 804Bh 10096h 804Ch 10098h 804DhRegister Address Map RegistersAddress Name Host Description Device ID Register F001h R Device ID DefaultManufacturer ID Register F000h R Device IdentificationData Buffer Size Register F003h R Version ID Register F002hThis register is reserved for future use Amount of Buffers Register F005h R Boot Buffer Size Register F004h RTechnology Register F006h R Start Address2 Register F101h R/W Start Address1 Register F100h R/W11~15 Start Address3~7 Register F102h~F106h Start Address8 Register F107h R/W Start Buffer Register F200h R/WSector allocation according to BSCCASE2 FSA=01 BSC = Sector allocation according to BSCCASE1 FSA=00 BSC =BSC =111 Sector allocation according to BSCCASE3 FSA=10 BSC =CMD Command Register F220h R/WAcceptable OperationWrite command into INT will automatically Two Methods to Clear Interrupt Register in Command InputInterrupt Register System Configuration 1 Register F221h R, R/W BrwlBurst Length BL Information119 Burst Length BLBurst LengthMain Burst LengthSpare RDY Polarity RDYpol Information7Iobe MRSMode Register Setting Description Write Mode WMWrite Mode Information1 Definition Description BwpsPIL System Configuration 2 Register F222hController Status Register F240h R Otpl OtpblOtpl INT Interrupt Status Register F241h R/WRsti Read Interrupt RI WI Interrupt Status Conditions Default State ValidEI Interrupt Status Conditions Default State Valid RI Interrupt Status ConditionsNand Flash Write Protection Status Register F24Eh R Start Block Address Register F24Ch R/WStart Block Address Register F24Dh R/W SBAECC Status Register 4 FF03h R FF03h, default = 0000h ECC Status Register 2 FF01h R FF01h, default = 0000hECC Status Register 3 FF02h R FF02h, default = 0000h ECC Status Register 1 FF00h RReset Flex-MuxOneNAND Add BP1 Data 00F0h Command Based OperationAdd Data 00E0h 0000h3 Read Identification Data XXXXh4 0090h Read Identification Data Command Reset Flex-MuxOneNAND CommandLoad Data Into Buffer Command Identification Data Description Address Data OutOperation ADQ0~15 Device Bus OperationCLK AVD Reset Mode Operation BP-F0hHot Reset Mode Operation Cold Reset Mode OperationWarm Reset Mode Operation Nand Flash Core Reset Mode OperationNand Flash Array Write Protection Operation BootRAM Write Protection OperationWrite Protection Operation Nand Array Write Protection StatesLocked Lock Command Sequence Unlocked Unlock Command SequenceUnlocked All Block Unlock Command Sequence Unlocked Nand Array Write Protection StateStart block address+Lock-tight block command 002Ch Nand Flash Array Write Protection State DiagramLocked-tight Lock-Tight Command Sequence Locked-tight Nand Array Write Protection StateDBS, DFS is for DDP Samsung strongly recommends to follow the above flow chartLock/Unlock/Lock-TightError completed DQ10=0?All Block Unlock Completed Data Protection During Power Down Operation Load OperationSuperload Operation LSB Page Recovery Read Synchronous Read Mode Operation RM=1, WM=X Asynchronous Read Mode Operation RM=0, WM=0Read Operation 2.2 4-, 8-, 16-, 32-Word Linear Burst Read Operation Continuous Linear Burst Read OperationReserved area is not available on Synchronous read Programmable Burst Read Latency Operation Output Disable Mode OperationHandshaking Operation See Timing Diagram 6.6, 6.7 Synchronous WriteRM=1, WM=1Data register Program OperationAddressing for program operation MLC BlockPaired Page Address Information Paired Page AddressFlash Memory Block including the page in error and copy If program operation results in an error, map outDBS, DFS is for DDP Target data to another block Interrupt register must not be written Program Interleave can work in Auto INTDBS, DFS is for DDP Cache Program Operation Sector0 Sector7Last PGM? Cache Program Operation Flow DiagramProgram Error Add F101h DQ=DBS Add DataRAM DQ=Data4KBInterleave Cache Program Operation If program operation Results in an errorBlock Add F241h DQ=0000h DQ=Data Copy back completed Copy back ErrorCopy-Back Program Operation with Random Data Input Write ‘DFS , FBA’ o f Fla shErase Operation Erase ErrorBlock Erase Operation Add F100h DQ=DFS*, FBA Add F101h DQ=DBS Erase Interleave1 @DDP Flow ChartINT=1Ready Erase Error Add F101h DQ=DBS Add F241h DQ=5=EIErase Suspend During a Block Erase Operation Erase Suspend / Erase Resume OperationErase Resume Partition Information PI Block SLC Only PI Block Boundary Information setting steps PI Block Boundary Information settingPI Block Boundary Information setting Flow Chart PI Block Access mode entry PI Block Access mode entry Flow ChartPI Block Erase PI Block Erase Operation Flow Chart In PI Block Access ModeErasing the PI Area Programming the PI Area PI Block Program OperationMemory location in the PI area can be program Locking the PIUpdate the PI Area PI UpdateAdd F241h DQ15=INT PI updated PI Block Load Operation OTP Operation SLC only OTP Block Area Structure 1st Block OTP Area StructureOTP Block Load Operation OTP ExitOTP Block Program Operation Programming the OTP AreaAdd DP DQ=Data-in OTP Block Program Operation Flow ChartDo Cold/Warm/Hot Nand Flash Core reset OTP Exit OTPL=0? YESLocking the OTP OTP Block Lock OperationOTP Lock Operation Steps Automatically Updated Add F241h DQ15=INT Do Cold resetAdd F241h DQ15=INT Write Data into DataRAM3 Add 1st Word Locking the 1st Block OTP 13.4 1st Block OTP Lock Operation1st Block OTP Lock Operation Steps 100 Locking the OTP and 1st Block OTP OTP and 1st Block OTP Lock OperationOTP and 1st Block OTP simultaneous Lock Operation Steps 102 DQ6 DQ5~DQ0 14 DQ6 Toggle BitStatus DQ15~DQ7 Progress Data Loading Don’t CareECC Operation ECC Bypass OperationInvalid Block Operation Invalid Block Identification Table OperationInvalid Block Replacement Operation Invalid Block Table Creation Flow Chart Start1st 1th Nth Block Replacement Operation SequenceBlock a 1st Block B 1th Nth 107Operating Conditions Absolute Maximum RatingsKFM4GH6Q4M Parameter DC CharacteristicsTest Conditions Device Capacitance Valid Block CharacteristicsAC Test Conditions DDP QDP66MHz 83MHz Unit AC Characteristics for Synchronous Burst ReadSee Timing Diagrams 6.1 Parameter Max MinKFKAGH6Q4MTBD AC Characteristics for Asynchronous ReadKFN8GH6Q4M Min MaxAC Characteristics for Burst Write Operation AC Characteristics for Asynchronous WriteSee Timing Diagrams Parameter Symbol Min Max Unit 200 AC Characteristics for Load/Program/Erase PerformanceAC Characteristics for INT Auto Mode 114CLK 8-Word Linear Burst Read Mode with Wrap AroundContinuous Linear Burst Read Mode with Wrap Around RDYLow See AC Characteristics Table DQ0 DQ15Asynchronous Read VA Transition Before Asynchronous Read VA Transition After AVD LowValid WD Asynchronous WriteADQ15-ADQ0 Hi-Z≈D7 8-Word Linear Burst Write ModeBurst Write Operation followed by Burst Read 118Start Initial Burst Write Operation 119Load Operation Timing See AC Characteristics .7 and TableLoad Command Sequence last two cycles Read Data Completed Da+nSuperload Operation Timing Program Operation Timing Program Command Sequence last two cycles122 Timing Ongoing StatusADQ15 Interleave Cache Program OperationADQ0~ Ongoing Status INT bitBlock Erase Operation Timing Erase Command Sequence125 Cold Reset Timing CE, OE Warm Reset Timing127 Flex-MuxOneNAND Hot Reset TimingADQi Flex-MuxOneNAND Operation or Idle Nand Flash Core reset Nand Flash Core Reset TimingData Protection Timing During Power Down ADQiRDY Status RD Hi-Z130 Write command into Command Register INT will automatically INT auto mode131 General Operation DQ type Methods of Determining Interrupt StatusINT Type Mono INT Type DDP 132Asynchronous Mode Using the INT Pin Synchronous Mode Using the INT PinINT Pin to a Host General Purpose I/O Polling the Interrupt Register Status Bit 134Determining Rp Value DDP, QDP Only INT pol = ‘High’ DefaultRpohm Ready INT pol = ‘Low’Vcc or Vccq Vss KFN8GH6Q4M @ Vcc = 1.8V, Ta = 25C , CL = 30pFBoot Sequence Boot SequenceBoot Loaders in Flex-MuxOneNAND Boot Loaders in Flex-MuxOneNAND DescriptionBL1 NBL3BL2 NBL2Last Block Address First Block Address Partition of Flex-MuxOneNANDMLC Partition +1 ~ n-1 Blocks Data RegisterDDPDual Die Package DDP and QDP DescriptionQDPQuad Die Package 8G product KFN8GH6Q4M 4G product KFM4GH6Q4M141 16G product KFKAGH6Q4M 142