Manufacturer ID Register F000h R, DeviceID150 | Samsung KFKAGH6Q4M

Flex-MuxOneNAND4G(KFM4GH6Q4M-DEBx)
Flex-MuxOneNAND8G(KFN8GH6Q4M-DEBx)
Flex-MuxOneNAND16G(KFKAGH6Q4M-DEBx)	FLASH MEMORY

2.8.2 Manufacturer ID Register F000h (R)

This Read register describes the manufacturer's identification.

Samsung Electronics Company manufacturer's ID is 00ECh.

F000h, default = 00ECh

15

14

13

12

11

10

9

8

7

6

5

4	3	2	1	0

ManufID

2.8.3 Device ID Register F001h (R)

This Read register describes the device.

F001h, see table for default.

15

14

13

12

11

10

9

8

7

6

5

4	3	2	1	0

		DeviceID
	Device Identification
	Device Identification	Description
	DeviceID [1:0] Vcc	00 = 1.8V, 01 = 3.3V, 10/11 = reserved

	DeviceID [2] Muxed/Demuxed	0 = Muxed, 1 = Demuxed

	DeviceID [3] Single/DDP	0 = Single, 1 = DDP/QDP

	DeviceID [7:4] Density	0000 = 128Mb, 0001 = 256Mb, 0010 = 512Mb,
	DeviceID [7:4] Density	0011 = 1Gb, 0100 = 2Gb, 0101=4Gb, 0110=8Gb, 0111=16Gb
		0011 = 1Gb, 0100 = 2Gb, 0101=4Gb, 0110=8Gb, 0111=16Gb

	DeviceID [9:8] Separation	10=Flex[SLC&MLC], 01=MLC, 00=SLC, 11=reserved

Device ID Default

Device

KFM4GH6Q4M

KFN8GH6Q4M

KFKAGH6Q4M

NOTE :

DeviceID[15:0]

0250h

0268h

0268h1)

1) The base density of all the three device is 4Gb, DDP and QDP use 2 and 4 multiplexed chips respectively, hence DDP and QDP device ID is same.

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Samsung KFKAGH6Q4M Manufacturer ID Register F000h R, Device ID Register F001h R, Device Identification, Device ID Default

Contents

KFM4GH6Q4M KFN8GH6Q4M KFKAGH6Q4M Revision No History Draft Date Initial issueRemark Corrected errata Oct Ordering Information General Overview Device Architecture Product FeaturesDevice Performance System Hardware Definitions Detailed Product Description 1 4Gb KFM4GH6Q4M / 8Gb KFN8GH6Q4M Pin Configuration63ball, 10mm x 13mm x max 1.0mmt , 0.8mm ball pitch FBGA4Gb TOP VIEW, Balls Facing Down 63ball Fbga OneNAND Chip 2 16Gb Product KFKAGH6Q4M TBD Multiplexed Address/Data bus Pin DescriptionRegister read cycles Interrupt Memory Array Organization Block DiagramInternal Nand Array Memory Organization OTP BlockMLC SectorBlockSLC Boot code Nand Array OTP Block BootRAM 1KB DataRAM0 2KB DataRAM1 2KBExternal BufferRAM Memory Internal Nand Array Memory Block Block Address Size Memory Map0000h 256KB Block Block Address Block160 Block128Block129 Block161 Block240 00F0h Block238 00EEh Block288 0120h Block257 Block256Block289 0121h Block258 Block290 0122h Block259 Block352 0160h Block321 Block320Block353 0161h Block322 Block354 0162h Block323 Block416 Block384Block385 Block417 Block496 01F0h Block494 01EEh Block544 0220h Block513 Block512Block545 0221h Block514 Block546 0222h Block515 Block608 0260h Block577 Block576Block609 0261h Block578 Block610 0262h Block579 Block672 Block640Block641 Block673 Block752 02F0h Block750 02EEh Block800 0320h Block769 Block768Block801 0321h Block770 Block802 0322h Block771 Block864 0360h Block833 Block832Block865 0361h Block834 Block866 0362h Block835 Block928 Block896Block897 Block929 Block1008 03F0h Block1006 03EEh Area Internal Memory Spare Area Assignment256W Byte Division Address Size Usage Description External Memory BufferRAM Address Map BootRAMSpare area BootRAMMain areaExternal Memory Map Detail Information DataRAMMain area Buf Word Byte External Memory Spare Area Assignment 10074h 803Bh 10076h 803Ch 10078h 803Dh 10054h 802Bh 10056h 802Ch 10058h 802Dh4bit ECC parity values 8046h 1008Ch 8047h 1008Eh 10090h BIBad block Information DataS10092h Managed by internal ECC logic 10094h 804Bh 10096h 804Ch 10098h 804Dh Register Address Map RegistersAddress Name Host Description Manufacturer ID Register F000h R Device ID DefaultDevice ID Register F001h R Device Identification Data Buffer Size Register F003h R Version ID Register F002hThis register is reserved for future use Amount of Buffers Register F005h R Boot Buffer Size Register F004h RTechnology Register F006h R Start Address2 Register F101h R/W Start Address1 Register F100h R/W11~15 Start Address3~7 Register F102h~F106h Start Buffer Register F200h R/W Start Address8 Register F107h R/W BSC =111 Sector allocation according to BSCCASE1 FSA=00 BSC =Sector allocation according to BSCCASE2 FSA=01 BSC = Sector allocation according to BSCCASE3 FSA=10 BSC = Acceptable Command Register F220h R/WCMD Operation Write command into INT will automatically Two Methods to Clear Interrupt Register in Command InputInterrupt Register Brwl System Configuration 1 Register F221h R, R/W Burst LengthMain Burst LengthSpare Burst Length BLBurst Length BL Information119 RDY Polarity RDYpol Information7 Iobe Write Mode Information1 Definition Description Write Mode WMMRSMode Register Setting Description Bwps Controller Status Register F240h R System Configuration 2 Register F222hPIL Otpl Otpbl Otpl INT Interrupt Status Register F241h R/WRsti EI Interrupt Status Conditions Default State Valid WI Interrupt Status Conditions Default State ValidRead Interrupt RI RI Interrupt Status Conditions Start Block Address Register F24Dh R/W Start Block Address Register F24Ch R/WNand Flash Write Protection Status Register F24Eh R SBA ECC Status Register 3 FF02h R FF02h, default = 0000h ECC Status Register 2 FF01h R FF01h, default = 0000hECC Status Register 4 FF03h R FF03h, default = 0000h ECC Status Register 1 FF00h R Reset Flex-MuxOneNAND Add BP1 Data 00F0h Command Based OperationAdd Data 00E0h 0000h3 Read Identification Data XXXXh4 0090h Load Data Into Buffer Command Reset Flex-MuxOneNAND CommandRead Identification Data Command Identification Data Description Address Data Out Operation ADQ0~15 Device Bus OperationCLK AVD BP-F0h Reset Mode Operation Warm Reset Mode Operation Cold Reset Mode OperationHot Reset Mode Operation Nand Flash Core Reset Mode Operation Write Protection Operation BootRAM Write Protection OperationNand Flash Array Write Protection Operation Nand Array Write Protection States Unlocked All Block Unlock Command Sequence Unlocked Unlock Command SequenceLocked Lock Command Sequence Unlocked Nand Array Write Protection State Locked-tight Lock-Tight Command Sequence Nand Flash Array Write Protection State DiagramStart block address+Lock-tight block command 002Ch Locked-tight Nand Array Write Protection State Lock/Unlock/Lock-TightError completed Samsung strongly recommends to follow the above flow chartDBS, DFS is for DDP DQ10=0? All Block Unlock Completed Load Operation Data Protection During Power Down Operation Superload Operation LSB Page Recovery Read Synchronous Read Mode Operation RM=1, WM=X Asynchronous Read Mode Operation RM=0, WM=0Read Operation 2.2 4-, 8-, 16-, 32-Word Linear Burst Read Operation Continuous Linear Burst Read OperationReserved area is not available on Synchronous read Programmable Burst Read Latency Operation Output Disable Mode OperationHandshaking Operation Synchronous WriteRM=1, WM=1 See Timing Diagram 6.6, 6.7 Addressing for program operation Program OperationData register MLC Block Paired Page Address Paired Page Address Information Flash Memory Block including the page in error and copy If program operation results in an error, map outDBS, DFS is for DDP Target data to another block Interrupt register must not be written Program Interleave can work in Auto INTDBS, DFS is for DDP Sector0 Sector7 Cache Program Operation Program Error Cache Program Operation Flow DiagramLast PGM? Add F101h DQ=DBS Add DataRAM DQ=Data4KB Interleave Cache Program Operation If program operation Results in an errorBlock Copy-Back Program Operation with Random Data Input Copy back completed Copy back ErrorAdd F241h DQ=0000h DQ=Data Write ‘DFS , FBA’ o f Fla sh Erase Operation Erase ErrorBlock Erase Operation INT=1Ready Erase Error Erase Interleave1 @DDP Flow ChartAdd F100h DQ=DFS*, FBA Add F101h DQ=DBS Add F101h DQ=DBS Add F241h DQ=5=EI Erase Suspend During a Block Erase Operation Erase Suspend / Erase Resume OperationErase Resume Partition Information PI Block SLC Only PI Block Boundary Information setting steps PI Block Boundary Information settingPI Block Boundary Information setting Flow Chart PI Block Access mode entry Flow Chart PI Block Access mode entry PI Block Erase PI Block Erase Operation Flow Chart In PI Block Access ModeErasing the PI Area Memory location in the PI area can be program PI Block Program OperationProgramming the PI Area Locking the PI Update the PI Area PI UpdateAdd F241h DQ15=INT PI updated PI Block Load Operation OTP Operation SLC only 1st Block OTP Area Structure OTP Block Area Structure OTP Exit OTP Block Load Operation Programming the OTP Area OTP Block Program Operation Do Cold/Warm/Hot Nand Flash Core reset OTP Exit OTP Block Program Operation Flow ChartAdd DP DQ=Data-in OTPL=0? YES Locking the OTP OTP Block Lock OperationOTP Lock Operation Steps Automatically Updated Add F241h DQ15=INT Do Cold resetAdd F241h DQ15=INT Write Data into DataRAM3 Add 1st Word Locking the 1st Block OTP 13.4 1st Block OTP Lock Operation1st Block OTP Lock Operation Steps 100 Locking the OTP and 1st Block OTP OTP and 1st Block OTP Lock OperationOTP and 1st Block OTP simultaneous Lock Operation Steps 102 Status DQ15~DQ7 14 DQ6 Toggle BitDQ6 DQ5~DQ0 Progress Data Loading Don’t Care ECC Bypass Operation ECC Operation Invalid Block Identification Table Operation Invalid Block Operation Invalid Block Table Creation Flow Chart Start Invalid Block Replacement Operation Block a Block Replacement Operation Sequence1st 1th Nth 1st Block B 1th Nth 107 Operating Conditions Absolute Maximum RatingsKFM4GH6Q4M Parameter DC CharacteristicsTest Conditions AC Test Conditions Valid Block CharacteristicsDevice Capacitance DDP QDP See Timing Diagrams 6.1 Parameter AC Characteristics for Synchronous Burst Read66MHz 83MHz Unit Max Min KFN8GH6Q4M AC Characteristics for Asynchronous ReadKFKAGH6Q4MTBD Min Max AC Characteristics for Burst Write Operation AC Characteristics for Asynchronous WriteSee Timing Diagrams Parameter Symbol Min Max Unit AC Characteristics for INT Auto Mode AC Characteristics for Load/Program/Erase Performance200 114 Continuous Linear Burst Read Mode with Wrap Around 8-Word Linear Burst Read Mode with Wrap AroundCLK RDY Asynchronous Read VA Transition Before See AC Characteristics Table DQ0 DQ15Low Asynchronous Read VA Transition After AVD Low ADQ15-ADQ0 Asynchronous WriteValid WD Hi-Z Burst Write Operation followed by Burst Read 8-Word Linear Burst Write Mode≈D7 118 119 Start Initial Burst Write Operation Load Command Sequence last two cycles Read Data See AC Characteristics .7 and TableLoad Operation Timing Completed Da+n Superload Operation Timing Program Operation Timing Program Command Sequence last two cycles122 Ongoing Status Timing ADQ0~ Interleave Cache Program OperationADQ15 Ongoing Status INT bit Block Erase Operation Timing Erase Command Sequence125 Cold Reset Timing CE, OE Warm Reset Timing127 Flex-MuxOneNAND Hot Reset TimingADQi Data Protection Timing During Power Down Nand Flash Core Reset TimingFlex-MuxOneNAND Operation or Idle Nand Flash Core reset ADQi RDY Status RD Hi-Z130 Write command into Command Register INT will automatically INT auto mode131 INT Type Mono INT Type DDP Methods of Determining Interrupt StatusGeneral Operation DQ type 132 Asynchronous Mode Using the INT Pin Synchronous Mode Using the INT PinINT Pin to a Host General Purpose I/O 134 Polling the Interrupt Register Status Bit Determining Rp Value DDP, QDP Only INT pol = ‘High’ DefaultRpohm Vcc or Vccq INT pol = ‘Low’Ready Vss KFN8GH6Q4M @ Vcc = 1.8V, Ta = 25C , CL = 30pF Boot Loaders in Flex-MuxOneNAND Boot SequenceBoot Sequence Boot Loaders in Flex-MuxOneNAND Description BL2 NBL3BL1 NBL2 MLC Partition +1 ~ n-1 Blocks Partition of Flex-MuxOneNANDLast Block Address First Block Address Data Register DDPDual Die Package DDP and QDP DescriptionQDPQuad Die Package 8G product KFN8GH6Q4M 4G product KFM4GH6Q4M141 142 16G product KFKAGH6Q4M