Samsung KFKAGH6Q4M, KFN8GH6Q4M, KFM4GH6Q4M warranty Block Erase Operation, Erase Error

Flex-MuxOneNAND4G(KFM4GH6Q4M-DEBx)
Flex-MuxOneNAND8G(KFN8GH6Q4M-DEBx)
Flex-MuxOneNAND16G(KFKAGH6Q4M-DEBx)	FLASH MEMORY

3.11 Erase Operation

3.11.1 Block Erase Operation

See Timing Diagram 6.14

The device can be erased one block at a time. To erase a block is to write all 1's into the desired memory block by executing the Internal Erase Routine. All previous data is lost.

Block Erase Operation Flow Chart

Start

Write ‘DFS*, FBA’ of Flash

Add: F100h DQ=DFS*, FBA

Select DataRAM for DDP

Add: F101h DQ=DBS*

Read Write Protection Status

Add: F24Eh DQ=US,LS,LTS

Write 0 to interrupt register1)

Add: F241h DQ=0000h

Write ‘Erase’ Command

Add: F220h DQ=0094h

Wait for INT register low to high transition

Add: F241h DQ=[15]=INT

Read Controller

Status Register

Add: F240h DQ[10]=Error

DQ[10]=0?
	YES			NO
Erase completed			Erase Error
* DBS, DFS is for DDP		*	: If erase operation results in an error, map out
			the failing block and replace it with another block.

NOTE :

1) ‘Write 0 to interrupt register’ step may be ignored when using INT auto mode. Refer to chapter 2.8.18.1

In order to perform the Internal Erase Routine, the following command sequence is necessary.

•The Host selects Flash Core of DDP chip.

•The Host sets the block address of the memory location.

•The Erase Command initiates the Internal Erase Routine. During the execution of the Routine, the host is not required to provide further controls or timings. During the Internal erase routine, all commands, except the Reset command and Erase Suspend Command, written to the device will be ignored.

A reset or power off during an erase operation will cause data corruption at the corresponding location Block.

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