Samsung KFN8GH6Q4M Product Features, Device Architecture, Device Performance, System Hardware

Flex-MuxOneNAND4G(KFM4GH6Q4M-DEBx)
Flex-MuxOneNAND8G(KFN8GH6Q4M-DEBx)
Flex-MuxOneNAND16G(KFKAGH6Q4M-DEBx)	FLASH MEMORY
1.3 Product Features

Device Architecture

•Design Technology:

•Supply Voltage:

•Host Interface:

•5KB Internal BufferRAM:

•NAND Array:

Device Performance

•Host Interface Type:

•Programmable Burst Read Latency:

•Multiple Reset Modes:

•Low Power Dissipation:

•Reliable CMOS Floating-Gate Technology

System Hardware

•Voltage detector generating internal reset signal from Vcc

•Hardware reset input (RP)

•Data Protection Modes

•User-controlled One Time Programmable(OTP) area

•Internal 4bit ECC

•Internal Bootloader supports Booting Solution in system

•Handshaking Feature

•Detailed chip information

Package size

•4G products

•8G products

•16G products(TBD)

M die

1.8V (1.7V ~ 1.95V)

16 bit

1KB BootRAM, 4KB DataRAM SLC : (4K+128)B Page Size

(256K+8K)B Block Size (64pages) MLC : (4K+128)B Page Size

(512K+16K)B Block Size (128pages)

Synchronous Burst Read

-Up to 66MHz / 83MHz clock frequency

-Linear Burst 4-, 8-, 16-, 32-words with wrap around

-Continuous 1K words Sequential Burst Synchronous Write

-Up to 66MHz / 83MHz clock frequency

-Linear Burst 4-, 8-, 16-, 32-, 1K-words with wrap around

-Continuous 1K words Sequential Burst

Asynchronous Random Read

-76ns access time Asynchronous Random Write Latency 3,4(Default),5,6 and 7

1~40MHz : Latency 3 available

1~66MHz : Latency 4,5,6 and 7 available

Over 66MHz : Latency 6,7 available Cold/Warm/Hot/NAND Flash Core Reset Typical Power,

-Standby current : 10uA (Single)

-Synchronous Burst Read current(66MHz/83MHz, single) : 20/25mA

-Synchronous Burst Write current(66MHz/83MHz, single) : 20/25mA

-Load current : 50mA

-Program current : 35mA

-Erase current : 40mA

-Endurance : 50K Program/Erase Cycles (SLC)

10K Program/Erase Cycles (MLC)

-Data Retention : 10 Years(SLC) /10 Years(MLC)

-Write Protection for BootRAM

-Write Protection for NAND Flash Array

-Write Protection during power-up

-Write Protection during power-down

-INT pin indicates Ready / Busy

-Polling the interrupt register status bit

-by ID register

63ball, 10mm x 13mm x max 1.0mmt , 0.8mm ball pitch FBGA 63ball, 10mm x 13mm x max 1.2mmt , 0.8mm ball pitch FBGA 63ball, 10mm x 13mm x max 1.4mmt , 0.8mm ball pitch FBGA (TBD)

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