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SPRS230L –OCTOBER 2003 –REVISED DECEMBER 2009

6.12 Flash Timing

Table 6-43. Flash Endurance for A and S Temperature Material(1)

 

 

 

MIN

TYP

MAX

UNIT

 

 

 

 

 

 

 

Nf

Flash endurance for the array (write/erase cycles)

0°C to 85°C (ambient)

20000

50000

 

cycles

NOTP

OTP endurance for the array (write cycles)

0°C to 85°C (ambient)

 

 

1

write

(1)Write/erase operations outside of the temperature ranges indicated are not specified and may affect the endurance numbers.

Table 6-44. Flash Endurance for Q Temperature Material(1)

 

 

 

MIN

TYP

MAX

UNIT

 

 

 

 

 

 

 

Nf

Flash endurance for the array (write/erase cycles)

–40°C to 125°C (ambient)

20000

50000

 

cycles

NOTP

OTP endurance for the array (write cycles)

–40°C to 125°C (ambient)

 

 

1

write

(1)Write/erase operations outside of the temperature ranges indicated are not specified and may affect the endurance numbers.

Table 6-45. Flash Parameters at 100-MHz SYSCLKOUT

 

PARAMETER (1)

TEST CONDITIONS

MIN

TYP

MAX

UNIT

Program

16-Bit Word

 

 

50

 

μs

Time

 

 

 

 

 

 

16K Sector

 

 

500

 

ms

 

 

 

 

 

 

 

 

 

 

 

 

8K Sector

 

 

250

 

ms

 

 

 

 

 

 

 

 

4K Sector

 

 

125

 

ms

 

 

 

 

 

 

 

Erase Time

16K Sector

 

 

10

 

S

 

 

 

 

 

 

 

 

8K Sector

 

 

10

 

S

 

 

 

 

 

 

 

 

4K Sector

 

 

10

 

S

 

 

 

 

 

 

 

IDD3VFLP

VDD3VFL current consumption during the

Erase

 

75

 

mA

 

Erase/Program cycle

 

 

 

 

 

 

Program

 

35

 

mA

 

 

 

 

 

 

 

 

 

 

 

IDDP

VDD current consumption during

 

 

140

 

mA

 

Erase/Program cycle

 

 

 

 

 

IDDIOP

VDDIO current consumption during

 

 

20

 

mA

 

Erase/Program cycle

 

 

 

 

 

 

 

 

 

 

 

 

(1)Typical parameters as seen at room temperature including function call overhead, with all peripherals off.

Table 6-46. Flash/OTP Access Timing

 

PARAMETER

MIN

TYP MAX

UNIT

 

 

 

 

 

ta(fp)

Paged flash access time

36

 

ns

ta(fr)

Random flash access time

36

 

ns

ta(OTP)

OTP access time

60

 

ns

Equations to compute the Flash page wait-state and random wait-state in Table 6-47are as follows:

Flash Page Wait-State+ ￿￿

ta(fp)

￿* 1￿(round up to the next highest integer) or 0, whichever is larger

 

 

 

tc(SCO)

 

Flash Random Wait-State+ ￿￿

 

 

ta(fr)

 

￿* 1￿(round up to the next highest integer) or 1, whichever is larger

 

t

c(SCO)

 

 

 

 

 

 

 

 

 

Equation to compute the OTP wait-state in Table 6-47is as follows:

￿￿ta(OTP) ￿ ￿

OTP Wait-State+* 1 (round up to the next highest integer) or 1, whichever is larger

tc(SCO)

Copyright © 2003–2009, Texas Instruments Incorporated

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Texas Instruments TMS320F28016 Flash Timing, Flash Endurance for a and S Temperature Material1, Flash/OTP Access Timing