Xilinx SP605 2. 128 MB DDR3 Component Memory, I/O Voltage Rails, 2 I/O Voltage Rail of FPGA Banks

Models: SP605

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I/O Voltage Rails

Detailed Description

I/O Voltage Rails

There are four available banks on the XC6SLX45T-3FGG484 device. Banks 0, 1, and 2 are connected for 2.5V I/O. Bank 3 is used for the 1.5V DDR3 component memory interface of Spartan-6 FPGA’s hard memory controller. The voltage applied to the FPGA I/O banks used by the SP605 board is summarized in Table 1-2.

Table 1-2:I/O Voltage Rail of FPGA Banks

FPGA Bank

I/O Voltage Rail

 

 

0

2.5V

 

 

1

2.5V

 

 

2

2.5V

 

 

3

1.5V

 

 

References

See the Xilinx Spartan-6 FPGA documentation for more information at

http://www.xilinx.com/support/documentation/spartan-6.htm.

2. 128 MB DDR3 Component Memory

There are 128 MB of DDR3 memory available on the SP605 board. A 1-Gb Micron MT41J64M16LA-187E (96-ball) DDR3 memory component is accessible through Bank 3 of the LX45T device. The Spartan-6 FPGA hard memory controller is used for data transfer across the DDR3 memory interface's 16-bit data path using SSTL15 signaling. The maximum data rate supported is 800 Mb/s with a memory clock running at 400 MHz. Signal integrity is maintained through DDR3 resistor terminations and memory on-die terminations (ODT), as shown in Table 1-3and Table 1-4.

Table 1-3:Termination Resistor Requirements

Signal Name

Board Termination

On-Die Termination

 

 

 

MEM1_A[14:0]

49.9 ohms to VTT

MEM1_BA[2:0]

49.9 ohms to VTT

 

 

 

MEM1_RAS_N

49.9 ohms to VTT

 

 

 

MEM1_CAS_N

49.9 ohms to VTT

 

 

 

MEM1_WE_N

49.9 ohms to VTT

 

 

 

MEM1_CS_N

100 ohms to GND

 

 

 

MEM1_CKE

4.7K ohms to GND

 

 

 

MEM1_ODT

4.7K ohms to GND

 

 

 

MEM1_DQ[15:0]

ODT

 

 

 

MEM1_UDQS[P,N], MEM1_LDQS[P,N]

ODT

 

 

 

MEM1_UDM, MEM1_LDM

ODT

 

 

 

MEM1_CK[P,N]

100 ohm differential at

memory component

 

 

 

 

 

Notes:

1.Nominal value of VTT for DDR3 interface is 0.75V.

SP605 Hardware User Guide

www.xilinx.com

13

UG526 (v1.1.1) February 1, 2010

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Xilinx SP605 2. 128 MB DDR3 Component Memory, I/O Voltage Rails, 2 I/O Voltage Rail of FPGA Banks, Signal Name, References