MuxOneNAND2G(KFM2G16Q2A-DEBx)

FLASH MEMORY

MuxOneNAND4G(KFN4G16Q2A-DEBx)

3.13 Erase Operation

There are multiple methods for erasing data in the device including Block Erase and Multi-Block Erase.

3.13.1 Block Erase Operation

See Timing Diagram 6.16

The Block Erase Operation is done on a block basis. To erase a block is to write all 1's into the desired memory block by executing the Internal Erase Routine. All previous data is lost.

Block Erase Operation Flow Chart

Start

Select DataRAM for DDP

Add: F101h DQ=DBS*

Write ‘DFS*, FBA’ of Flash

Add: F100h DQ=DFS*, FBA

Write 0 to interrupt register1)

Add: F241h DQ=0000h

Write ‘Erase’ Command

Add: F220h DQ=0094h

Wait for INT register low to high transition

Add: F241h DQ=[15]=INT

*

: If erase operation results in an error, map out

 

 

the failing block and replace it with another block.

Read Interrupt register

Add: F241h DQ[5]=EI

DQ[5]=1?

YES

Read Controller

Status Register

Add: F240h DQ[10]=Error

DQ[10]=0?

YES

Erase completed

NOTE :

 

* DFS is for DDP

NO

Read Controller

 

Status Register ‘Lock’ bit high

 

Add: F240h DQ[14]=Lock

Erase Lock Error

NO

Erase Error

1) ‘Write 0 to interrupt register’ step may be ignored when using INT auto mode. Refer to chapter 2.8.18.1.

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Samsung KFM2G16Q2A, KFN4G16Q2A warranty Block Erase Operation