INT

1st

A/DQ0: Address A/DQ15 Setting

INT (cont.)

2nd

Command

3rd

Address

Address

Setting

Setting

Setting1)

 

 

 

 

 

4th

 

 

 

 

 

 

 

 

 

Status

Command

Host reads 1st

Status

Address

Read

Setting

data from DataRAM

Read

Setting

Cache Read Diagram

MuxOneNAND2G(KFM2G16Q2A-DEBx) MuxOneNAND4G(KFN4G16Q2A-DEBx)

- 98 -

A/DQ0:

Command

Host reads (n-2)th

 

Status

Finish

Host reads (n-1)th

 

Status

Host reads nth

A/DQ15

 

Command

 

data from DataRAM

 

data from DataRAM

 

 

Setting

 

Read

 

Read data from DataRAM

(cont.)

 

Setting

 

-1st Address Setting : Address Setting Operation for first page load(FCBA, FCPA, FCSA, and BSA).

-2nd~nth Address Setting : Address Setting Operation from 2nd~nth page load(FBA and FPA).

-Command Setting : It consists of writing 0 to Interrupt register and writing command to Command register. (In INT auto mode, writing 0 to Interrupt register may be ignored)

-Status Read : It consists of INT high state checking and Controller Status Register checking step.

-Host read 1st~nth data from DataRAM : During this step, Host can read data from DataRAM by any read mode which supported by MuxOneNAND.

-Finish Command Setting : If host want to finish Cache Read, Host can finish Cache Read by issuing Finish Command.

-Controller Status Register Status: During Cache Read - Ongoing / Load

ECC Error during Cache Read - Ongoing / Load / Error ECC Error at Finish Cache Read - Load / Error

NOTE :

1) 3rd~nth address can be set during INT=low, and also during INT=High, before next ‘Cache Read Command’.

FLASH MEMORY

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Samsung KFM2G16Q2A 1st DQ0 Address A/DQ15 Setting INT 2nd, 3rd, 4th Status Command Host reads 1st, Cache Read Diagram