MuxOneNAND2G(KFM2G16Q2A-DEBx)

FLASH MEMORY

 

MuxOneNAND4G(KFN4G16Q2A-DEBx)

1.2 Ordering Information

 

KF X XX 16 Q 2 A - D E X X

Samsung MuxOneNAND Memory

Device Type

M : Single Chip

N : Dual Chip

Density 2G : 2Gb

4G : 4Gb

Organization

16 : x16 Organization

Operating Voltage Range Q : 1.8V(1.7 V to 1.95V)

Speed

6 : 66MHz

8 : 83MHz

Product Line designator

B : Include Bad Block

D : Daisy Sample

Operating Temperature Range

E : Extended Temp. (-30 °C to 85 °C)

Package

D : FBGA(Lead Free)

Version

A : 2nd Generation

Page Architecture

2 : 2KB Page

1.3 Architectural Benefits

MuxOneNAND is a highly integrated non-volatile memory solution based around a NAND Flash memory array.

The chip integrates system features including:

A BootRAM and bootloader

Two independent bi-directional 2KB DataRAM buffers

A High-Speed x16 Host Interface

On-chip Error Correction

On-chip NOR interface controller

This on-chip integration enables system designers to reduce external system logic and use high-density NAND Flash in applications that would otherwise have to use more NOR components.

MuxOneNAND takes advantage of the higher performance NAND program time, low power, and high density and combines it with the syn- chronous read performance of NOR. The NOR Flash host interface makes MuxOneNAND an ideal solution for applications like G3 Smart Phones, Camera Phones, and mobile applications that have large, advanced multimedia applications and operating systems, but lack a NAND controller.

When integrated into a Samsung Multi-Chip-Package with Samsung Mobile DDR SDRAM, designers can complete a high-performance, small footprint solution.

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Samsung KFN4G16Q2A, KFM2G16Q2A warranty Ordering Information, Architectural Benefits