Samsung KFM2G16Q2A, KFN4G16Q2A Data Protection During Power Down Operation, Load Operation, Yes

Models: KFM2G16Q2A KFN4G16Q2A

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MuxOneNAND2G(KFM2G16Q2A-DEBx)

FLASH MEMORY

MuxOneNAND4G(KFN4G16Q2A-DEBx)

3.5 Data Protection During Power Down Operation

See Timing Diagram 6.21

The device is designed to offer protection from any involuntary program/erase during power-transitions.

RP pin which provides hardware protection is recommended to be kept at VIL before Vcc drops to 1.5V.

3.6 Load Operation

See Timing Diagrams 6.11

The Load operation is initiated by setting up the start address from which the data is to be loaded. The Load command is issued in order to ini- tiate the load.

During a Load operation, the device:

-Transfers the data from NAND Flash array into the BufferRAM

-ECC is checked and any detected and corrected error is reported in the status response as well as any unrecoverable error.

Once the BufferRAM has been filled, an interrupt is issued to the host so that the contents of the BufferRAM can be read. The read from the BufferRAM can be an asynchronous read mode or synchronous read mode. The status information related to load operation can be checked by the host if required.

The device has a dual data buffer memory architecture (DataRAM0, DataRAM1), each 2KB in size. Each DataRAM buffer has 4

Sectors. The device is capable of independent and simultaneous data-read operation from one data buffer and data-load operation to the other data buffer. Refer to the information for more details in section 3.15.1, "Read-While-Load Operation".

Load Operation Flow Chart Diagram

Start

Select DataRAM for DDP

Add: F101h DQ=DBS

Write ‘DFS*, FBA’ of Flash

Add: F100h DQ=DFS, FBA

Write ‘FPA, FSA’ of Flash

Add: F107h DQ=FPA, FSA

Write ‘BSA, BSC’ of DataRAM

Add: F200h DQ=BSA, BSC

Write 0 to interrupt register1)

Add: F241h DQ=0000h

NOTE :

Write ‘Load’ Command

Add: F220h

DQ=0000h or 0013h

Wait for INT register low to high transition

Add: F241h DQ[15]=INT

Read Controller

Status Register

Add: F240h DQ[10]=Error

NO

DQ[10]=0?

 

Map Out

 

YES

Host reads data from

DataRAM

Read completed

* DBS, DFS is for DDP

1) ‘Write 0 to interrupt register’ step may be ignored when using INT auto mode. Refer to chapter 2.8.18.1

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Samsung KFM2G16Q2A, KFN4G16Q2A warranty Data Protection During Power Down Operation, Load Operation, Yes