MuxOneNAND2G(KFM2G16Q2A-DEBx)

FLASH MEMORY

 

MuxOneNAND4G(KFN4G16Q2A-DEBx)

OTP Block Program Operation Flow Chart

 

Start

 

Select DataRAM for DDP

 

Add: F101h DQ=DBS*

 

Write DFS*, FBA’ of Flash1)

 

Add: F100h DQ=DFS*, FBA

 

Write 0 to interrupt register4)

 

Add: F241h DQ=0000h

 

Write ‘OTP Access’ Command

 

Add: F220h DQ=0065h

 

Wait for INT register

 

low to high transition

 

Add: F241h DQ[15]=INT

 

Write Data into DataRAM2)

 

Add: DP DQ=Data-in

 

Data Input

NO

Completed?

 

Write ‘DFS, FBA’ of Flash Add: F100h DQ=DFS, FBA3)

Write ‘FPA, FSA’ of Flash Add: F107h DQ=FPA, FSA

Write ‘BSA, BSC’ of DataRAM Add: F200h DQ=BSA, BSC

Write 0 to interrupt register4)

Add: F241h DQ=0000h

Write Program command

Add: F220h

DQ=0080h or 001Ah

Automatically

checked

OTPL=0?

YES

Wait for INT register low to high transition

Add: F241h DQ[15]=INT

Read Controller

Status Register

Add: F240h DQ[10]=0(Pass)

Automatically

NO updated

Update Controller

Status Register

Add: F240h

DQ[14]=1(Lock), DQ[10]=1(Error)

Wait for INT register low to high transition

Add: F241h DQ[15]=INT

*DBS, DFS is for DDP (DBS and DFS must be 0)

OTP Programming completed

Do Cold/Warm/Hot

/NAND Flash Core reset

OTP Exit

Read Controller

Status Register

Add: F240h DQ[10]=1(Error)

Do Cold/Warm/Hot

/NAND Flash Core reset

OTP Exit

NOTE :

1)FBA(NAND Flash Block Address) could be omitted or any address.

2)Data input could be done anywhere between "Start" and "Write Program Command".

3)FBA should point the unlocked area address among NAND Flash Array address map.

4)‘Write 0 to interrupt register’ step may be ignored when using INT auto mode. Refer to chapter 2.8.18.1.

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Samsung KFM2G16Q2A OTP Block Program Operation Flow Chart, Write ‘DFS, FBA’ of Flash Add F100h DQ=DFS, FBA3, OTPL=0? YES