MuxOneNAND2G(KFM2G16Q2A-DEBx)

FLASH MEMORY

MuxOneNAND4G(KFN4G16Q2A-DEBx)

6.22 Toggle Bit Timing in Asynchronous Read (VA Transition Before AVD Low)

See AC Characteristics Table 5.5

CE

 

tRC

 

 

 

 

 

 

 

 

 

 

 

tCER

 

 

 

 

 

OE

 

tOE

 

 

 

 

tASO

 

 

 

 

 

 

 

 

 

WE

tCA

tAVDO

 

tCEZ

 

 

tCE

 

tOEZ

 

 

 

 

 

 

 

 

 

 

 

 

 

A/DQ0:

VA1)

Status RD1)

VA

Status RD

Hi-Z

 

A/DQ15

 

 

 

 

 

 

 

tAAVDS

tAAVDH

 

 

 

 

 

 

 

 

 

 

AVD

 

tAVDP

 

 

 

 

 

 

 

 

 

 

 

 

tAA

 

 

 

Hi-Z

RDY2)

 

 

 

Hi-Z

 

 

 

 

 

 

 

 

 

 

 

 

NOTE :

1)VA=Valid Read Address, RD=Read Data.

2)Before IOBE is set to 1, RDY and INT pin are High-Z state.

3)Refer to chapter 5.5 for tASO description and value.

6.23 Toggle Bit Timing in Asynchronous Read (VA Transition After AVD Low)

See AC Characteristics Table 5.5

CE

 

tRC

 

 

 

 

 

 

 

 

 

 

 

 

tCER

 

 

 

 

 

OE

 

tOE

tCEZ

 

 

 

tASO

 

 

 

 

 

 

 

 

 

 

 

WE

tAVDO

tCE

tOEZ

 

 

 

tCA

tCA

 

 

 

 

 

 

 

 

 

 

 

 

 

A/DQ0:

VA1)

Status RD1)

 

VA

Status RD

Hi-Z

 

 

A/DQ15

 

 

 

 

 

 

 

 

tACC

 

 

 

 

 

 

tAAVDS

tAAVDH

 

 

 

 

AVD

 

 

 

 

 

 

 

 

tAVDP

 

 

 

 

RDY

2)

Hi-Z

 

 

 

 

 

 

 

 

 

Hi-Z

 

 

 

 

 

 

 

 

 

NOTE :

1)VA=Valid Read Address, RD=Read Data.

2)Before IOBE is set to 1, RDY and INT pin are High-Z state.

3)Refer to chapter 5.5 for tASO description and value.

- 164 -

Page 164
Image 164
Samsung KFM2G16Q2A, KFN4G16Q2A warranty Status RD Hi-Z, Rdy, 164