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Address Setting

Synchronous Burst

 

Block Read Command

tINTL

 

INT

 

Number of

 

 

 

 

 

 

 

 

 

 

Pages

 

 

 

 

 

 

 

 

 

CE

 

 

 

 

 

 

 

 

 

 

ADQ0~

. . . . . . . . .

. .

A1

1st page out

A2

2nd page out

A3

3rd page out

A4

4th page out

ADQ15

 

 

 

 

 

 

 

 

 

 

CLK

. . . . . . . . .

 

 

 

 

 

 

 

 

 

RDY

. . . . . . . . .

High-Z

 

 

 

 

 

 

 

 

. .

. .

. .

. .

High-Z . .

Case 1 : BL=1K word synchronous burst

See AC Characteristics table 5.

block

4 and

read

5.11.

6.4 Synchronous Burst Block Read Timing

MuxOneNAND2G(KFM2G16Q2A-DEBx) MuxOneNAND4G(KFN4G16Q2A-DEBx)

AVD

WE

OE

. . . . . . . . .

. . . . . . . . .

. . . . . . . . .

High

High

High

. .

. .

. .

INT: Indicator for DataRAM’s Status (Ready=High, Busy=Low)

RDY: Indicator for Latency of Sync Burst Block Read

Burst Length: 4, 8, 16, 32, 1K Word, and Continuous Synchronous Burst Block Read are available.

A1~A4: For the fixed number of words linear burst block read, A1~A4 are start address of the each DataRAM. For detailed timing diagram, refer to Chapter 6.3

WE must be set high throughout the operation.

FLASH MEMORY

Page 148
Image 148
Samsung KFM2G16Q2A, KFN4G16Q2A warranty Synchronous Burst Block Read Timing, 148