MuxOneNAND2G(KFM2G16Q2A-DEBx)

 

 

 

 

FLASH MEMORY

 

MuxOneNAND4G(KFN4G16Q2A-DEBx)

 

 

 

 

5.9 AC Characteristics for Load/Program/Erase Performance

 

 

 

 

 

See Timing Diagrams 6.11, 6.12, and 6.16

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Parameter

 

Symbol

Min

 

Typ

Max

Unit

 

 

Spare Load time(Note 1, Note2)

 

tRD1

-

 

23

35

s

 

 

 

 

 

 

 

 

Sector Load time(Note 1)

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Page Load time(Note 1)

 

tRD2

-

 

30

45

s

 

 

 

 

 

 

 

 

 

 

 

 

Spare Program time(Note 1, Note3)

 

tPGM1

-

 

205

720

s

 

 

 

 

 

 

 

 

Sector Program time(Note 1)

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Page Pogram time(Note 1)

 

tPGM2

-

 

220

750

s

 

 

 

 

 

 

 

 

 

 

 

 

OTP Access Time(Note 1)

 

tOTP

-

 

500

700

ns

 

 

 

 

 

 

 

 

 

 

 

 

Lock/Unlock/Lock-tight (Note 1)

 

tLOCK

-

 

500

700

ns

 

 

 

 

 

 

 

 

 

 

 

 

All Block Unlock Time

 

 

tABU

-

 

2

3

s

 

 

 

 

 

 

 

 

 

 

 

 

 

Erase Suspend Time (Note 1)

 

tESP

-

 

400

500

s

 

 

 

 

 

 

 

 

 

 

 

 

 

Erase Resume Time(Note 1)

1 Block

 

tERS1

-

 

1.5

2

ms

 

 

 

 

 

 

 

 

 

 

 

 

2~64 Blocks

 

tERS2

 

 

4

6

ms

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Number of Partial Program Cycles in the page (Including main

 

NOP

-

 

-

4

cycles

 

 

and spare area)

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Block Erase time (Note 1)

1 Block

 

tBERS1

-

 

1.5

2

ms

 

 

 

 

 

 

 

 

 

 

 

 

2~64 Blocks

 

tBERS2

-

 

4

6

ms

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Multi Block Erase Verify Read time(Note 1)

 

tRD3

-

 

70

100

s

 

 

 

 

 

 

 

 

 

 

 

 

NOTE :

1)These parameters are tested based on INT bit of interrupt register. Because the time on INT pin is related to the pull-up and pull-down resistor value.

2)Spare Load time is little bit less than Sector Load time.

3)Spare Program time is same as Sector program time.

4)2/3 sector Load/Program time is between Sector Load/Progrma time and Page Load/Program time.

5.10 AC Characteristics for INT Auto Mode

See Timing Diagrams 6.25

Parameter

Symbol

Min

Max

Unit

Command Input to INT Low

tWB

-

200

ns

5.11 AC Characteristics for Synchronous Burst Block Read

See Timing Diagrams 6.3, 6.4

Parameter

Symbol

Typ.

Max

Unit

INT Low Period During Synch Burst Block Read

tINTL

1

-

us

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Page 145
Image 145
Samsung KFN4G16Q2A, KFM2G16Q2A AC Characteristics for Load/Program/Erase Performance, AC Characteristics for INT Auto Mode