MuxOneNAND2G(KFM2G16Q2A-DEBx)

FLASH MEMORY

 

MuxOneNAND4G(KFN4G16Q2A-DEBx)

3.4.3.3 Locked-tight NAND Array Write Protection State

 

A block that is in a locked-tight state can only be changed to locked state after a Cold or Warm Reset. Unlock and Lock command sequences will not affect its state. This is an added level of write protection security. If any blocks are changed to locked-tight state, the all block unlock

command will fail. In order to use all block unlock command again, a cold reset is needed.

A block must first be set to a locked state before it can be changed to locked-tight using the Lock-tight command.

Locked-tight

Lock-Tight Command Sequence:

Start block address+Lock-tight block command (002Ch)

3.4.4 NAND Flash Array Write Protection State Diagram

RP pin: High

&

Start block address Lock block Command or

Cold reset or Warm reset

unlock

Lock

unlock

Lock

RP pin: High

&

Start block address (000h) +All Block Unlock Command

RP pin: High

&

Start block address

+Unlock block Command

Lock

RP pin: High

&

Start block address +Lock-tight block Command

Lock

Lock-tight

Lock

Power On

Cold reset or

Warm reset

*NOTE : If the 1st Block is set to be OTP, Block 0 will always be Lock Status

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Samsung KFN4G16Q2A warranty Locked-tight Nand Array Write Protection State, Nand Flash Array Write Protection State Diagram