Samsung KFM2G16Q2A Product Features, Device Architecture, Device Performance, System Hardware

MuxOneNAND2G(KFM2G16Q2A-DEBx)	FLASH MEMORY
MuxOneNAND4G(KFN4G16Q2A-DEBx)

1.4 Product Features

Device Architecture

•Design Technology:

•Supply Voltage:

•Host Interface:

•5KB Internal BufferRAM:

•SLC NAND Array:

Device Performance

•Host Interface Type:

•Programmable Burst Read Latency:

•Multiple Sector Read/Write:

•Multiple Reset Modes:

•Multi Block Erase:

•Low Power Dissipation:

•Reliability

System Hardware

•Voltage detector generating internal reset signal from Vcc

•Hardware reset input (RP)

•Data Protection Modes

•User-controlled One Time Programmable(OTP) area

•Internal 2bit EDC / 1bit ECC

•Internal Bootloader supports Booting Solution in system

•Handshaking Feature

•Detailed chip information

Packaging

•2G products

•4G DDP products

A die

1.8V (1.7V ~ 1.95V)

16 bit

1KB BootRAM, 4KB DataRAM

(2K+64)B Page Size, (128K+4K)B Block Size

Synchronous Burst Read

-Up to 83MHz clock frequency

-Linear Burst 4-, 8-, 16-, 32-words with wrap around

-Continuous 1K words Sequential Burst Synchronous Burst Block Read

-Up to 83MHz clock frequency

-Linear Burst 4-, 8-, 16-, 32-, 1K-words with no-wrap

-Continuous (1K words) 64 Page Sequential Burst Synchronous Write

-Up to 83MHz clock frequency

-Linear Burst 4-, 8-, 16-, 32-, 1K-words with wrap around

-Continuous 1K words Sequential Burst

Asynchronous Random Read

-76ns access time Asynchronous Random Write Latency 3,4(Default),5,6 and 7.

1~40Mhz : Latency 3 available

1~66Mhz : Latency 4,5,6 and 7 available

Over 66Mhz : Latency 6,7 available. Up to 4 sectors using Sector Count Register Cold/Warm/Hot/NAND Flash Core Resets up to 64 Blocks

Typical Power,

-Standby current : 10uA (Single)

-Synchronous Burst Read current(66MHz/83MHz, single) : 20/25mA

-Synchronous Burst Write current(66MHz/83MHz, single) : 20/25mA

-Load current : 30mA

-Program current : 25mA

-Erase current : 20mA

-Multi Block Erase current : 20mA

-Data retention 10year after 10K Program/Erase Cycles

-Data retention 1year after 100K Program/Erase Cycles

-Write Protection for BootRAM

-Write Protection for NAND Flash Array

-Write Protection during power-up

-Write Protection during power-down

-INT pin indicates Ready / Busy

-Polling the interrupt register status bit

-by ID register

63ball, 10mm x 13mm x max 1.0mmt , 0.8mm ball pitch FBGA 63ball, 10mm x 13mm x max 1.2mmt , 0.8mm ball pitch FBGA

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