Samsung KFM2G16Q2A, KFN4G16Q2A 5.7 AC Characteristics for Asynchronous Write, 5.8 AC Characteristics for Burst Write Operation

MuxOneNAND2G(KFM2G16Q2A-DEBx)
- 144 -
FLASH MEMORY
MuxOneNAND4G(KFN4G16Q2A-DEBx)
5.7 AC Characteristics for Asynchronous Write
See Timing Diagrams 6.7
5.8 AC Characteristics for Burst Write Operation
See Timing Diagrams 6.8, 6.9 and 6.10
NOTE :
1) Target Clock frequency is 83Mhz.
Parameter Symbol Min Max Unit
WE Cycle Time tWC 70 -ns
AVD low pulse width tAVDP 12 -ns
Address Setup Time tAAVDS 5 - ns
Address Hold Time tAAVDH 6 - ns
Data Setup Time tDS 30 -ns
Data Hold Time tDH 0 - ns
CE Setup Time tCS 0 - ns
CE Hold Time tCH 0 - ns
WE Pulse Width tWPL 40 -ns
WE Pulse Width High tWPH 30 -ns
WE Disable to AVD Enable tWEA 15 -ns
CE Low to RDY Valid tCER - 15 ns
CE Disable to Output & RDY High Z tCEZ - 20 ns
Parameter Symbol 66MHz 83MHz Unit
Min Max Min Max
Clock CLK1) 166183MHz
Clock Cycle tCLK 15 - 12 - ns
AVD Setup to CLK tAVDS 5 - 4 - ns
AVD Hold Time from CLK tAVDH 2 - 2 - ns
Address Setup Time to CLK tACS 5 - 4 - ns
Address Hold Time from CLK tACH 6 - 6 - ns
Data Setup Time to CLK tWDS 5 - 4 - ns
Data Hold Time from CLK tWDH 2 - 2 - ns
WE Setup Time to CLK tWES 5 - 4 - ns
WE Hold Time from CLK tWEH 3 - 3 - ns
CLK High or Low Time tCLKH/L tCLK/3 - 5 - ns
CE high pulse width tCEHP 10 - 10 - ns
CLK to RDY Valid tRDYO - 11 - 9 ns
CLK to RDY Setup Time tRDYA - 11 - 9 ns
RDY Setup Time to CLK tRDYS 4-3-ns
CE low to RDY valid tCER - 15 - 15 ns
Clock to CE disable tCEH 2 tCLK - 4.5 2 tCLK - 4.5 ns
CE Setup Time to CLK tCES 6 - 4.5 - ns
CE Disable to Output & RDY High Z tCEZ - 20 - 20 ns