MuxOneNAND2G(KFM2G16Q2A-DEBx)

FLASH MEMORY

 

MuxOneNAND4G(KFN4G16Q2A-DEBx)

OTP Block Lock Operation Flow Chart

 

 

Start

 

Select DataRAM for DDP

Add: F101h DQ=DBS*

Write ‘DFS, FBA’ of Flash1) Add: F100h DQ=DFS, FBA

Write 0 to interrupt register4)

Add: F241h DQ=0000h

Write ’OTP Access’ Command

Add: F220h DQ=0065h

Wait for INT register low to high transition

Add: F241h DQ[15]=INT

Write Data into DataRAM2)

Add: 8th Word

in sector0/spare/page0

DQ=XXFCh

*DBS, DFS is for DDP (DBS and DFS must be 0)

Write ’DFS, FBA’ of Flash Add: F100h DQ=DFS, FBA3)

Write ’FPA, FSA’ of Flash Add: F107h DQ=0000h

Write ’BSA, BSC’ of DataRAM Add: F200h DQ=0801h/0C01h

Write 0 to interrupt register4)

Add: F241h DQ=0000h

Write Program command

Add: F220h

DQ=0080h or 001Ah

Wait for INT register low to high transition

Add: F241h DQ[15]=INT

Do Cold reset

Automatically

updated

Update Controller

Status Register

Add: F240h

DQ[6]=1(OTPL)

OTP lock completed

NOTE :

1)FBA(NAND Flash Block Address) could be omitted or any address.

2)Data input could be done anywhere between "Start" and "Write Program Command".

3)FBA should point the unlocked area address among NAND Flash Array address map.

4)‘Write 0 to interrupt register’ step may be ignored when using INT auto mode. Refer to chapter 2.8.18.1.

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Samsung KFM2G16Q2A, KFN4G16Q2A Write ’DFS, FBA’ of Flash Add F100h DQ=DFS, FBA3, Add F241h DQ15=INT Do Cold reset, 126