ADQ0~

. . A1

 

1st data input

ADQ15

 

 

 

 

4KB data into 2 DataRAMs

High-Z

 

 

 

 

 

 

. . . . .

A2

2nd data input

 

A3

3nd data input

 

 

 

 

 

 

 

 

 

 

 

 

 

 

4KB data into

 

4KB data into

2 DataRAMs

 

2 DataRAMs

6.14 2X Cache Program

MuxOneNAND2G(KFM2G16Q2A MuxOneNAND4G(KFN4G16Q2A

- 157 -

Ongoing

Status

INT

2X cache program Command

2X Cache program Command

. .

2X program Command

Operation Timing

-DEBx) -DEBx)

Controller Status Register Check

Plane1 / Plane2 current : Invalid (Fixed to 0)

Plane1 / Plane2 previous: Invalid (Fixed to 0)

A1, A2, A3 : Address of DataRAM to be written

INT: Indicator for DataRAM’s Status (Ready=High, Busy=Low)

Controller Status Register Check Plane1 / Plane2 current : Invalid Plane1 / Plane2 previous: Pass=0, Fail=1

Controller Status Register Check Plane1 / Plane2 current : Pass=0, Fail=1 Plane1 / Plane2 previous: Pass=0, Fail=1

Ongoing Status : Indicated by OnGo bit in Controller Status Register [15] (F240h)

4KB data input : Asynch Write / Synch Write available.

Command input and INT pin behavior is based on ‘INT auto mode’.

In ‘INT manual mode’, writing ‘0’ to interrupt register is required before command issue.

FLASH MEMORY

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Samsung warranty 14 2X Cache Program, Operation Timing, MuxOneNAND2GKFM2G16Q2A MuxOneNAND4GKFN4G16Q2A