MuxOneNAND2G(KFM2G16Q2A-DEBx)

FLASH MEMORY

MuxOneNAND4G(KFN4G16Q2A-DEBx)

5.0 AC CHARACTERISTICS

5.1 AC Test Conditions

Parameter

Value (66MHz)

Value (83MHz)

Input Pulse Levels

0V to VCC

0V to VCC

 

 

 

 

Input Rise and Fall Times

CLK

3ns

2ns

 

 

 

other inputs

5ns

2ns

 

 

 

 

 

Input and Output Timing Levels

VCC/2

VCC/2

 

 

 

Output Load

CL = 30pF

CL = 30pF

VCC

VCC/2

 

Input & Output

 

 

 

VCC/2

 

Test Point

 

 

 

 

 

0V

Input Pulse and Test Point

Device

Under

Test

* CL = 30pF including scope and Jig capacitance

Output Load

5.2 Device Capacitance

CAPACITANCE(TA = 25 °C, VCC = 1.8V, f = 1.0MHz)

Item

Symbol

Test Condition

 

Single

DDP

 

Unit

Min

 

Max

Min

 

Max

 

 

 

 

 

 

 

Input Capacitance

CIN1

VIN=0V

-

 

10

-

 

20

pF

 

 

 

 

 

 

 

 

 

 

Control Pin Capacitance

CIN2

VIN=0V

-

 

10

-

 

20

pF

Output Capacitance

COUT

VOUT=0V

-

 

10

-

 

20

pF

 

 

 

 

 

 

 

 

 

 

INT Capacitance

CINT

VOUT=0V

-

 

10

-

 

20

pF

 

 

 

 

 

 

 

 

 

 

NOTE :

Capacitance is periodically sampled and not 100% tested.

5.3 Valid Block Characteristics

Parameter

Symbol

Min

Typ.

Max

Unit

Valid Block Number

Single

NVB

2008

-

2048

Blocks

 

 

 

 

 

DDP

4016

-

4096

Blocks

 

 

 

 

 

 

 

 

 

NOTE :

1)The device may include invalid blocks when first shipped. Additional invalid blocks may develop while being used. The number of valid blocks is presented with both cases of invalid blocks considered. Invalid blocks are defined as blocks that contain one or more bad bits. Do not erase or program factory-marked bad blocks.

2)The 1st block, which is placed on 00h block address, is guaranteed to be a valid block up to 1K program/erase cycles with 1bit/512Byte ECC.

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Samsung KFN4G16Q2A, KFM2G16Q2A warranty AC Test Conditions, Device Capacitance, Valid Block Characteristics, Ddp