MuxOneNAND2G(KFM2G16Q2A-DEBx)

FLASH MEMORY

MuxOneNAND4G(KFN4G16Q2A-DEBx)

6.16 Block Erase Operation Timing

See AC Characteristics Tables 5.5, 5.7 and 5.9.

 

tAAVDS

 

Erase Command Sequence

 

 

 

Read Status Data

 

 

 

 

tWEA

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

AVD

 

 

 

 

 

 

 

 

 

 

 

 

 

tAVDP

 

 

 

 

 

 

 

 

 

 

 

 

 

tAAVDH

 

 

 

 

 

 

 

 

 

 

A/DQ0:

AA

EMA

CA

ECD

SA

In

 

SA

Completed

AA*

PMB

 

 

A/DQ15

 

 

 

tDS

 

Progress

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

CE

tCS

 

 

tDH

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

tCER

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

OE

 

 

 

tCH

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

tCER

tWPL

 

 

 

 

 

 

 

 

 

 

WE

 

 

 

 

 

 

 

 

 

 

 

 

 

tWPH

 

 

 

 

 

 

 

 

 

 

 

 

 

tBERS1

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

tWC

 

 

 

 

 

 

 

 

 

CLK

 

VIL

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

INT

 

 

 

 

 

 

 

 

 

 

 

 

bit

 

 

 

 

 

 

 

 

 

 

 

 

 

Hi-Z

 

 

tCEZ

 

 

 

 

 

tCEZ

 

 

RDY

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

NOTE :

1)AA = Address of address register CA = Address of command register ECD = Erase Command

EMA = Address of memory to be erased SA = Address of status register

AA* = Address of Start Address1 Register(for Flash Block Address)

PMB = DFS & FBA(Flash Block address) of memory to be programmed next time

2)For “In progress” and “complete” status, refer to status register.

3)Status reads in this figure is asynchronous read, but status read in synchronous mode is also supported.

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Samsung KFN4G16Q2A, KFM2G16Q2A warranty Block Erase Operation Timing, Erase Command Sequence Read Status Data, 159