Intel® IXP43X Product Line of Network
Figure 31. DDR - Write Preamble/Postamble Duration
DQS
TVB6
DQS
TVA6
Table 30. |
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Symbol |
| Parameter | Minimum | Nominal | Maximum | Units | Notes | |
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TVB1 |
| DQ, CB and DM write output valid time before DQS. | 521 |
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| ps | 1 | |
TVA1 |
| DQ, CB and DM write output valid time after DQS. | 521 |
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| ps | 1 | |
TVB3 |
| Address and Command write output valid before CK | 1771 |
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| ps | 1, 4 | |
| rising edge. |
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TVA3 |
| Address and Command write output valid after CK rising | 1771 |
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| ps | 1, 4 | |
| edge. |
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TVB4 |
| DQ, CB and DM read input valid time before DQS rising | 323 |
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| ps | 2 | |
| or falling edges. |
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TVA4 |
| DQ, CB and DM read input valid time after DQS rising or | 323 |
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| ps | 2 | |
| falling edges. |
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TVB5 |
| CS_N[1:0] control valid before CK rising edge. | 1771 |
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| ps | 4 | |
TVA5 |
| CS_N[1:0] control valid after CK rising edge. | 1771 |
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| ps | 4 | |
TVB6 |
| DQS write preamble duration. |
| 3750 |
| ps | 3 | |
TVA6 |
| DQS write postamble duration. |
| 2500 |
| ps | 3 | |
TV7 |
| DQ, CB, and DM pulse width (tDIPW) |
| 1750 |
| ps | 1 | |
Notes: |
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1. | See Figure 29, “DDR SDRAM Write Timings” on page 77 |
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2. | See Figure 30, “DDR SDRAM Read Timings” on page 77. The specified minimum requirements for the “Data to strobe | |||||||
| read setup” and “Data from strobe read hold” are determined with the DQS delay programmed for 90 degree phase | |||||||
| shift. |
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3. | See Figure 31, “DDR - Write Preamble/Postamble Duration” on page 78 |
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4. | Address/Command pin group; RAS_N, CAS_N, WE_N, MA[13:0], BA[1:0] |
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5. | Designed to JEDEC specification; it is recommended that IBIS models should be used to verify signal integrity on | |||||||
| individual designs |
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Intel® IXP43X Product Line of Network Processors |
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HDG | April 2007 |
78 | Document Number: 316844; Revision: 001US |