Hardware Design
The memory controller only corrects single bit ECC errors on read cycles. The ECC is stored into the DDRII/DDRI SDRAM array along with the data and is checked when the data is read. If the code is incorrect, the MCU corrects the data before reaching the initiator of the read. ECC error scrubbing is done with software.
Refer to the Intel® IXP43X Product Line of Network Processors Datasheet for a detailed list of features.
General DDRII/I SDRAM routing guidelines can be found in Section 7.3.3, “Routing Guidelines” on page 82. For more detailed information, see the PC266 and PC400 DDR SDRAM specification.
3.2.1Signal Interface
Table 4. | DDRII/I SDRAM Interface Pin Description (Sheet 1 of 2) | ||||
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| Type |
| VTT |
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Name |
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| Terminatio | Description | |
| Field | ||||
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| n |
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| Connect a pair of differential clock |
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D_CK[2:0] / |
| O | signals to every device; When |
| DDRII/I SDRAM Clock Out — Provides the |
| using both banks, daisy chain | No | positive differential clocks to the external | ||
DDR_CK[2:0] |
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| devices with same data bit |
| SDRAM memory subsystem. | |
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| sequence. |
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D_CK_N[2:0] / |
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| DDRII/I SDRAM Clock Out — Provides the |
| O | Same as above | No | negative differential clocks to the external | |
DDR_CK_N[2:0] |
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| SDRAM memory subsystem. | |
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D_CS_N[1:0] / |
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| Use the same CS to control |
| Chip Select — Must be asserted for all |
| O | Yes | transactions to the DDRII/I SDRAM device. | ||
C_CS_N[1:0] |
| data + | |||
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| One per bank. | ||
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D_RAS_N / |
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| The RAS signal must be connected |
| Row Address Strobe — Indicates that the |
| O | to each device in a daisy chain | Yes | current address on D_MA[13:0] / | |
DDR_RAS_N |
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| manner |
| DDR_MA[13:0] is the row. | |
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D_CAS_N / |
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| The CAS signal must be connected |
| Column Address Strobe — Indicates that the |
| O | to each device in a daisy chain | Yes | current address on D_MA[13:0] / | |
DDR_CAS_N |
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| manner |
| DDR_MA[13:0] is the column. | |
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| The WE signal must be connected |
| Write Strobe — Defines whether or not the |
D_WE_N / DDR_WE_N | O | to each device in a daisy chain | Yes | current operation by the DDRII/I SDRAM is to | |
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| manner |
| be a read or a write. |
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| Data Bus Mask — Controls the DDRII/I SDRAM |
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| Connect to each DM device pin. |
| data input buffers. Asserting D_WE_N/ |
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| DDR_WE_N causes the data on D_DQ[31:0]/ | |
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| For the |
| DDR_DQ[31:0] and D_CB[7:0]/DDR_CB[7:0] |
D_DM[4:0] / |
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| DM signal per device. |
| to be written into the DDRII/I SDRAM devices. |
| O | For the | Yes | D_DM[4:0]/DDR_DM[4:0] controls this | |
DDR_DM[4:0] |
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| DM signal per device (depending |
| operation on a | |
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| on how many data bits are being |
| DDR_DM[3:0] are intended to correspond to |
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| used). |
| each byte of a word of data. D/DM[4]/ |
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| DDR_DM[4] is intended to be utilized for the |
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| ECC byte of data. |
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D_BA[1:0] / |
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| The BA signals must be connected |
| DDRII/I SDRAM Bank Selects — Controls which |
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| of the internal DDRII/I SDRAM banks to read | ||
| O | to each device in a daisy chain | Yes | ||
DDR_BA[1:0] |
| or write. D_BA[1:0]/DDR_BA[1:0] are used for | |||
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| manner. |
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| all technology types supported. | |
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D_MA[13:0] / |
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| All address signals must be |
| Address bits 13 through 0 — Indicates the row |
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| or column to access depending on the state of | ||
| O | connected to each device in a | Yes | ||
DDR_MA[13:0] |
| D_RAS_N/DDR_RAS_N and D_CAS_N/ | |||
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| daisy chain manner. |
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| DDR_CAS_N. | |
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D_DQ[31:0] / |
| I/O | Must be connected in parallel to | Yes | Data Bus — |
DDR_DQ[31:0] |
| achieve a | |||
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| Intel® IXP43X Product Line of Network Processors | |
April 2007 |
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| HDG |
Document Number: 316844; Revision: 001US |
| 19 |