Samsung S3C84E5 user manual 11. A/D Converter Electrical Characteristics

S3C84E5/C84E9/P84E9ELECTRICAL DATA

Table 17-11. A/D Converter Electrical Characteristics

(TA = – 25 °C to + 85 °C, VDD = VLVR to 5.5 V, VSS = 0 V)

Parameter	Symbol	Test Conditions	Min	Typ.	Max	Unit
Resolution			–	10	–	bit
Total accuracy		VDD = 5.12 V	–	–	± 3	LSB
Integral linearity	ILE	CPU clock = 10 MHz		–	± 2
error		AVREF = 5.12 V
Differential	DLE	AVSS = 0 V		–	± 1
linearity error
Offset error of	EOT			± 1	± 3
top
Offset error of	EOB			± 0.5	± 2
bottom
Conversion time	tCON	10-bit conversion	20	–	–	µs
(1)		50 x 4/fOSC (3), fOSC = 10 MHz
Analog input	VIAN	–	AVSS	–	AVREF	V
voltage
Analog input	RAN	–	2	1000	–	MW
impedance
Analog	AVREF	–	2.5	–	VDD	V
reference
voltage
Analog ground	AVSS	–	VSS	–	VSS + 0.3
Analog input	IADIN	AVREF = VDD = 5 V	–	–	10	µA
current		conversion time = 20 µs
Analog block	IADC	AVREF = VDD = 5 V		1	3	mA
current (2)		conversion time = 20 µs
		AVREF = VDD = 3 V		0.5	1.5
		conversion time = 20 µs
		AVREF = VDD = 5 V		100	500	nA
		when power down mode

NOTES:

1."Conversion time" is the time required from the moment a conversion operation starts until it ends.

2.IADC is operating current during A/D conversion.

3.fOSC is the main oscillator clock.

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