Manuals / GE / Laundry Appliance / Clothes Dryer

GE PFMN445, PFDS450, PFDN440, PFDS455, PFMS450 About dryer features, Lock, Settings, Drum Lamp

Models: PFMS455 PFMS450 PFDN445 PFDN440 PFDS450 PFDS455 PFMN445 PFMN440

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About cycle options.

NOTE: Notallfeaturesareavailableonalldryermodels.

LOCK

Lock

You can lock the controls to prevent any selections from being made. Or you can lock the controls after you have started a cycle.

childrencannotaccidentallystartthedryer bytouchingpadswiththisoptionselected.

To lock the dryer, press the LOCK button.

To unlock the dryer, press and hold the LOCK button for 3 seconds.

The light in center of the LOCK button will light up when the controls are locked.

Push to Lock Control

Hold 3 Secs to Unlock

Even though the controls are locked, the POWER button is still active in case you have to turn the unit off.

DRUM

LIGHT

SETTINGS

Press & hold for 3 seconds for secondary options

Settings

Under the SETTINGS option, you can adjust the volume or the brightness of the display.

VOLUME

n End of Cycle (signal) volume can be set from HIGH, MED, LOW or OFF.

nControl Sounds volume can be set from HIGH, MED, LOW or OFF.

DISPLAy BRIGHTNESS can be set from HIGH, MED or LOW.

After you have made your selection, press ENTER.

NOTE: To access the SETTINGS menu, hold down the DRUM LIGHT button for 3 seconds.

About dryer features.

Drum Lamp

Before replacing the light bulb, be sure to unplug the dryer power cord or disconnect the dryer at the household distribution panel by removing the fuse or switching off the circuit breaker. Reach above dryer opening from inside the drum. Remove the bulb and replace with the same size bulb.

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GE PFMN445, PFDS450 About dryer features, Lock, Settings, Drum Lamp, DISPLAy Brightness can be set from HIGH, MED or LOW
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PFMS455, PFMS450, PFDN445, PFDN440, PFDS450 specifications

The GE PFMN440, PFMN445, PFDS455, PFDS450, and PFDN440 are part of GE’s innovative family of radio frequency (RF) power transistors designed for various commercial and industrial applications. These devices are renowned for their efficient performance, providing a blend of high power output and reliability, ideal for telecommunications, broadcasting, and other RF applications.

The GE PFMN440 and PFMN445 are members of the RF transistor family that offer robust performance in high-frequency applications. The PFMN440 is particularly noted for its outstanding linearity and power gain, which makes it suitable for use in RF amplifiers and transmitters. Its compact package and advanced thermal management design enable efficient heat dissipation, which is critical in maintaining performance under load. The PFMN445, with a higher power rating, amplifies these characteristics, supporting greater output levels while maintaining linearity, resulting in clearer signal output.

The PFDS455 and PFDS450, on the other hand, are optimized for industrial applications with features that emphasize durability and efficiency. The PFDS455 stands out for its ability to handle higher voltages and currents, making it an excellent choice for applications that require resilience against overloads. The device's superior thermal stability ensures that it performs consistently across a range of operational environments. The PFDS450 shares many of these attributes but is tailored for applications requiring a slightly lower output, making it versatile for different RF circuit designs.

The PFDN440 is designed with specialized technologies that enhance its functionality in digital and mixed-signal environments. It integrates advanced semiconductor materials which reduce power consumption and improve efficiency without compromising performance. This device is particularly useful in applications that demand high-speed operation and reliability, making it a preferred choice for modern communication systems.

All these transistors utilize state-of-the-art manufacturing processes, including advanced doping techniques and epitaxial growth, which contribute to their excellent electrical characteristics. Their high thermal conductivity, high breakdown voltage, and wide frequency response range make these devices suitable for both commercial and specialized applications.

Overall, GE's PFMN440, PFMN445, PFDS455, PFDS450, and PFDN440 transistors are emblematic of modern RF technology, combining power, efficiency, and reliability to cater to a wide spectrum of RF applications.