Instrucciones de instalación

CÓMO INVERTIR LA APERTURA DE LA PUERTA (si así se desea)

NOTAS IMPORTANTES

•Lea todas las instrucciones antes de comenzar.

•Manipule las piezas con cuidado para no rayar la pintura.

•Coloque las puertas sobre una superficie de trabajo que no raye.

•Separe los tornillos por sus piezas relacionadas para evitar usarlos en lugares equivocados.

•Todos los tornillos deben ajustarse a mano.

•El tiempo normal utilizado para invertir

la apertura de la puerta es de 30–60 minutos.

IMPORTANTE: Una vez que haya comenzado, no mueva el gabinete hasta haber finalizado la inversión de la apertura de la puerta.

Estas instrucciones son para cambiar las bisagras del lado derecho al lado izquierdo; si alguna

vez desea cambiarlas de nuevo al lado derecho, siga las mismas instrucciones e invierta todas las referencias de izquierda a derecha.

KIT ESTÁNDAR DE REVERSIBILIDAD

rTapa de puerta de cromo

rTapa de bisagra de puerta

de cromo

rTapa de puerta interna

r2 botones obturadores

HERRAMIENTAS NECESARIAS

rDestornillador Phillips o destornillador quadrex

rEspátula o destornillador de lados finos

rPinzas

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GE PFDS450 Cómo Invertir LA Apertura DE LA Puerta si así se desea, Notas Importantes, KIT Estándar DE Reversibilidad
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PFMS455, PFMS450, PFDN445, PFDN440, PFDS450 specifications

The GE PFMN440, PFMN445, PFDS455, PFDS450, and PFDN440 are part of GE’s innovative family of radio frequency (RF) power transistors designed for various commercial and industrial applications. These devices are renowned for their efficient performance, providing a blend of high power output and reliability, ideal for telecommunications, broadcasting, and other RF applications.

The GE PFMN440 and PFMN445 are members of the RF transistor family that offer robust performance in high-frequency applications. The PFMN440 is particularly noted for its outstanding linearity and power gain, which makes it suitable for use in RF amplifiers and transmitters. Its compact package and advanced thermal management design enable efficient heat dissipation, which is critical in maintaining performance under load. The PFMN445, with a higher power rating, amplifies these characteristics, supporting greater output levels while maintaining linearity, resulting in clearer signal output.

The PFDS455 and PFDS450, on the other hand, are optimized for industrial applications with features that emphasize durability and efficiency. The PFDS455 stands out for its ability to handle higher voltages and currents, making it an excellent choice for applications that require resilience against overloads. The device's superior thermal stability ensures that it performs consistently across a range of operational environments. The PFDS450 shares many of these attributes but is tailored for applications requiring a slightly lower output, making it versatile for different RF circuit designs.

The PFDN440 is designed with specialized technologies that enhance its functionality in digital and mixed-signal environments. It integrates advanced semiconductor materials which reduce power consumption and improve efficiency without compromising performance. This device is particularly useful in applications that demand high-speed operation and reliability, making it a preferred choice for modern communication systems.

All these transistors utilize state-of-the-art manufacturing processes, including advanced doping techniques and epitaxial growth, which contribute to their excellent electrical characteristics. Their high thermal conductivity, high breakdown voltage, and wide frequency response range make these devices suitable for both commercial and specialized applications.

Overall, GE's PFMN440, PFMN445, PFDS455, PFDS450, and PFDN440 transistors are emblematic of modern RF technology, combining power, efficiency, and reliability to cater to a wide spectrum of RF applications.
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