GE PFMS450 Contenu DE L’ENsEMBLE, RTournevis cruciforme RGants RClé à fourche RNiveau Pince

Models: PFMS455 PFMS450 PFDN445 PFDN440 PFDS450 PFDS455 PFMN445 PFMN440

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Instructions d’installation

COMMENT sUPERPOsER LA sÉCHEUsE À LA LAVEUsE (optionnel) (suite)

CONTENU DE L’ENsEMBLE

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

rSupport droit

 

 

r4 vis #12 x 1 po

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

r4 vis #8 x 1/2 po

rSupport gauche

r4 cales en caoutchouc

OUTILs NÉCEssAIREs

rTournevis cruciforme

rGants

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

rClé à fourche

rNiveau

rPince

COMMENT PRÉPARER L’INsTALLATION

Retirez l’emballage.

Aplatissez le carton pour l’utiliser comme cale pour coucher la sécheuse sur le côté. Utilisez le carton pour protéger également le sol en face de l’endroit choisi pour l’installation.

COMMENT INsTALLER L’ENsEMBLE DE sUPPORT DE sUPERPOsITION

1COMMENT RETIRER LEs PIEDs

DE NIVELLEMENT DE LA sÉCHEUsE

A.Posez avec précaution la sécheuse sur le côté. Utilisez le matériau d’emballage de manière à ne pas égratigner le fini de la sécheuse.

B.Utilisez une clé à fourche ou une pince pour retirer les pieds de la sécheuse.

Faites sortir et retirez les 4 pieds

2COMMENT INsTALLER LEs CALEs EN CAOUTCHOUC sUR LA BAsE DE LA sÉCHEUsE

Saisissez-vous des 4 cales en caoutchouc situées dans le paquet contenant toutes les pièces. Retirez la pellicule protectrice et collez les cales dans les coins où vous avez retiré les pieds de nivellement.

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GE PFMS450, PFDS450, PFDN440, PFMN445 Contenu DE L’ENsEMBLE, RTournevis cruciforme RGants RClé à fourche RNiveau Pince

PFMS455, PFMS450, PFDN445, PFDN440, PFDS450 specifications

The GE PFMN440, PFMN445, PFDS455, PFDS450, and PFDN440 are part of GE’s innovative family of radio frequency (RF) power transistors designed for various commercial and industrial applications. These devices are renowned for their efficient performance, providing a blend of high power output and reliability, ideal for telecommunications, broadcasting, and other RF applications.

The GE PFMN440 and PFMN445 are members of the RF transistor family that offer robust performance in high-frequency applications. The PFMN440 is particularly noted for its outstanding linearity and power gain, which makes it suitable for use in RF amplifiers and transmitters. Its compact package and advanced thermal management design enable efficient heat dissipation, which is critical in maintaining performance under load. The PFMN445, with a higher power rating, amplifies these characteristics, supporting greater output levels while maintaining linearity, resulting in clearer signal output.

The PFDS455 and PFDS450, on the other hand, are optimized for industrial applications with features that emphasize durability and efficiency. The PFDS455 stands out for its ability to handle higher voltages and currents, making it an excellent choice for applications that require resilience against overloads. The device's superior thermal stability ensures that it performs consistently across a range of operational environments. The PFDS450 shares many of these attributes but is tailored for applications requiring a slightly lower output, making it versatile for different RF circuit designs.

The PFDN440 is designed with specialized technologies that enhance its functionality in digital and mixed-signal environments. It integrates advanced semiconductor materials which reduce power consumption and improve efficiency without compromising performance. This device is particularly useful in applications that demand high-speed operation and reliability, making it a preferred choice for modern communication systems.

All these transistors utilize state-of-the-art manufacturing processes, including advanced doping techniques and epitaxial growth, which contribute to their excellent electrical characteristics. Their high thermal conductivity, high breakdown voltage, and wide frequency response range make these devices suitable for both commercial and specialized applications.

Overall, GE's PFMN440, PFMN445, PFDS455, PFDS450, and PFDN440 transistors are emblematic of modern RF technology, combining power, efficiency, and reliability to cater to a wide spectrum of RF applications.