Installation Instructions

BOTTOM VENTING (cont.)

ADDING A NEW DUCT

• Reconnect the cut

 

Portion “A”

portion A of the

 

 

duct to the blower

Fixing hole

housing.

• Tape the elbow

 

 

in a 90-degree

 

 

position to

 

 

prevent rotation.

 

 

• Insert the elbow

 

Rear hole

through the rear hole

 

and connect it to

 

 

portion A. Rotate

 

 

the elbow through

 

Bottom

the bottom opening.

opening

•While holding down

the pipe and elbow, using

 

your hand through the rear

 

opening, drill a 1/8″ hole

 

through the bottom tab

 

hole and the pipe as

Bottom view

shown in the illustration.

NOTE: Make sure the hole is drilled all the way through the elbow and pipe.

CAUTION: Be sure not to pull or damage the electrical wires inside the dryer when inserting the duct.

•While still holding down

the pipe and elbow from the rear opening, screw the pipes in place with the previously saved screw.

• Apply duct tape

Duct tape

as shown on the joint

 

between the dryer internal

 

duct and the elbow.

 

NOTE: Make sure the tape covers the screw hole in portion A where it connects to the elbow.

CAUTION: Internal duct joints must be secured with tape; otherwise, they may separate and cause a safety hazard.

Dryer Exhaust to the bottom of cabinet for Gas and Electric models.

ADDING COVER PLATE TO REAR OF CABINET (BOTTOM EXHAUST)

Plate

(Kit WE1M454)

Connect standard metal elbows and ducts to complete the exhaust system. Cover back opening with a plate (Kit WE1M454) available from your local service provider. Place dryer in final location.

WARNING – NEVER LEAVE THE BACK OPENING WITHOUT THE PLATE.

(Kit WE1M454)

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GE PFMS455, PFDS450, PFDN440, PFMN445, PFDS455, PFMS450 Bottom Venting, Adding Cover Plate to Rear of Cabinet Bottom Exhaust
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PFMS455, PFMS450, PFDN445, PFDN440, PFDS450 specifications

The GE PFMN440, PFMN445, PFDS455, PFDS450, and PFDN440 are part of GE’s innovative family of radio frequency (RF) power transistors designed for various commercial and industrial applications. These devices are renowned for their efficient performance, providing a blend of high power output and reliability, ideal for telecommunications, broadcasting, and other RF applications.

The GE PFMN440 and PFMN445 are members of the RF transistor family that offer robust performance in high-frequency applications. The PFMN440 is particularly noted for its outstanding linearity and power gain, which makes it suitable for use in RF amplifiers and transmitters. Its compact package and advanced thermal management design enable efficient heat dissipation, which is critical in maintaining performance under load. The PFMN445, with a higher power rating, amplifies these characteristics, supporting greater output levels while maintaining linearity, resulting in clearer signal output.

The PFDS455 and PFDS450, on the other hand, are optimized for industrial applications with features that emphasize durability and efficiency. The PFDS455 stands out for its ability to handle higher voltages and currents, making it an excellent choice for applications that require resilience against overloads. The device's superior thermal stability ensures that it performs consistently across a range of operational environments. The PFDS450 shares many of these attributes but is tailored for applications requiring a slightly lower output, making it versatile for different RF circuit designs.

The PFDN440 is designed with specialized technologies that enhance its functionality in digital and mixed-signal environments. It integrates advanced semiconductor materials which reduce power consumption and improve efficiency without compromising performance. This device is particularly useful in applications that demand high-speed operation and reliability, making it a preferred choice for modern communication systems.

All these transistors utilize state-of-the-art manufacturing processes, including advanced doping techniques and epitaxial growth, which contribute to their excellent electrical characteristics. Their high thermal conductivity, high breakdown voltage, and wide frequency response range make these devices suitable for both commercial and specialized applications.

Overall, GE's PFMN440, PFMN445, PFDS455, PFDS450, and PFDN440 transistors are emblematic of modern RF technology, combining power, efficiency, and reliability to cater to a wide spectrum of RF applications.
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