Instrucciones de instalación

3CÓMO INSTALAR EL SOPORTE EN LA SECADORA

A.Alinee los orificios del soporte izquierdo con los orificios del extremo inferior izquierdo de la secadora. Utilice un destornillador Phillips para instalar los 2 tornillos auto-roscantes #12 x 1”.

B.Repita el paso anterior con el soporte derecho en el extremo inferior derecho de la secadora.

C.Coloque la secadora en posición vertical.

NOTA: Asegúrese de que la secadora se encuentre sobre un pedazo de material de empaque para que los soportes sujetos a la parte inferior

de la secadora no dañen el piso.

4CÓMO INSTALAR LA SECADORA Y EL SOPORTE EN LA LAVADORA

A.Levante la secadora sobre la lavadora. Tenga cuidado de no rayar la parte superior de la lavadora con los soportes. Proteja el panel de control de la lavadora con cartón u otra protección. Asegúrese de levantar la secadora lo suficiente para liberar el panel de control de la lavadora.

ADVERTENCIA:

Lesiones personales potenciales. Se recomienda

que más de dos personas levanten la secadora hasta su posición debido a su peso y tamaño. No hacerlo puede provocar una lesión personal o la muerte.

B.Alinee los orificios del soporte con los orificios de la parte trasera de la lavadora. Con

un destornillador Phillips, sujete los 2 tornillos auto-roscantes #8 x 1/2”. Repita en ambos lados de la lavadora.

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5FINALICE LA INSTALACIÓN

A.Consulte las Instrucciones de instalación de la lavadora para completar la instalación de la lavadora.

B.Consulte las Instrucciones de instalación

de la secadora para completar la instalación de la secadora.

C.Con cuidado deslice o desplace la lavadora y secadora apiladas a su lugar. Utilice almohadillas u otro dispositivo para ayudar a deslizar los artefactos y para proteger el piso.

ADVERTENCIA:

Lesiones personales potenciales. No empuje la secadora una vez que se haya instalado sobre la lavadora. Si empuja la secadora puede pellizcarse los dedos.

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GE PFDN440, PFDS450, PFMN445, PFDS455, PFMS450 Finalice LA Instalación, Cómo Instalar LA Secadora Y EL Soporte EN LA Lavadora
Page 144 Page 146

PFMS455, PFMS450, PFDN445, PFDN440, PFDS450 specifications

The GE PFMN440, PFMN445, PFDS455, PFDS450, and PFDN440 are part of GE’s innovative family of radio frequency (RF) power transistors designed for various commercial and industrial applications. These devices are renowned for their efficient performance, providing a blend of high power output and reliability, ideal for telecommunications, broadcasting, and other RF applications.

The GE PFMN440 and PFMN445 are members of the RF transistor family that offer robust performance in high-frequency applications. The PFMN440 is particularly noted for its outstanding linearity and power gain, which makes it suitable for use in RF amplifiers and transmitters. Its compact package and advanced thermal management design enable efficient heat dissipation, which is critical in maintaining performance under load. The PFMN445, with a higher power rating, amplifies these characteristics, supporting greater output levels while maintaining linearity, resulting in clearer signal output.

The PFDS455 and PFDS450, on the other hand, are optimized for industrial applications with features that emphasize durability and efficiency. The PFDS455 stands out for its ability to handle higher voltages and currents, making it an excellent choice for applications that require resilience against overloads. The device's superior thermal stability ensures that it performs consistently across a range of operational environments. The PFDS450 shares many of these attributes but is tailored for applications requiring a slightly lower output, making it versatile for different RF circuit designs.

The PFDN440 is designed with specialized technologies that enhance its functionality in digital and mixed-signal environments. It integrates advanced semiconductor materials which reduce power consumption and improve efficiency without compromising performance. This device is particularly useful in applications that demand high-speed operation and reliability, making it a preferred choice for modern communication systems.

All these transistors utilize state-of-the-art manufacturing processes, including advanced doping techniques and epitaxial growth, which contribute to their excellent electrical characteristics. Their high thermal conductivity, high breakdown voltage, and wide frequency response range make these devices suitable for both commercial and specialized applications.

Overall, GE's PFMN440, PFMN445, PFDS455, PFDS450, and PFDN440 transistors are emblematic of modern RF technology, combining power, efficiency, and reliability to cater to a wide spectrum of RF applications.
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