Installation Instructions

INSTALLING THE PEDESTAL (if desired)

CAUTION — Due to the size and weight of these products, and to reduce the risk of personal injury or damage to the product, TWO PEOPLE ARE REQUIRED FOR PROPER INSTALLATION.

KIT CONTENTS

r4 Support pads rDrawer divider

r4 Mounting screws

TOOLS YOU WILL NEED

rPhillips-head

r7 mm Socket wrench

screwdriver

r9/16″ Open-end wrench or adjustable wrench

INSTALLATION PREPARATION

Remove the packaging.

The drawer divider is taped at the top of the shipping carton. Remove the divider and set aside for final installation.

Flatten the product carton to use as a pad to lay the washer or dryer down on its side. Continue using the carton to protect the finished floor in front of the installation location.

1 REMOVE THE LEVELING LEGS

ACarefully lay the washer or dryer on its side to access the leveling legs on the bottom of the appliance.

IMPORTANT: Do not lay the washer or dryer on its back! Do not remove the shipping bolts on the back side of the washer. The bolts must remain in place until the washer is returned to an upright position.

BUse an open-end wrench to remove the washer or dryer leveling legs.

Back out and remove all 4 leveling legs

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GE PFDS455, PFDS450 Remove the Leveling Legs, R4 Support pads rDrawer divider Mounting screws, RPhillips-head, Screwdriver
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PFMS455, PFMS450, PFDN445, PFDN440, PFDS450 specifications

The GE PFMN440, PFMN445, PFDS455, PFDS450, and PFDN440 are part of GE’s innovative family of radio frequency (RF) power transistors designed for various commercial and industrial applications. These devices are renowned for their efficient performance, providing a blend of high power output and reliability, ideal for telecommunications, broadcasting, and other RF applications.

The GE PFMN440 and PFMN445 are members of the RF transistor family that offer robust performance in high-frequency applications. The PFMN440 is particularly noted for its outstanding linearity and power gain, which makes it suitable for use in RF amplifiers and transmitters. Its compact package and advanced thermal management design enable efficient heat dissipation, which is critical in maintaining performance under load. The PFMN445, with a higher power rating, amplifies these characteristics, supporting greater output levels while maintaining linearity, resulting in clearer signal output.

The PFDS455 and PFDS450, on the other hand, are optimized for industrial applications with features that emphasize durability and efficiency. The PFDS455 stands out for its ability to handle higher voltages and currents, making it an excellent choice for applications that require resilience against overloads. The device's superior thermal stability ensures that it performs consistently across a range of operational environments. The PFDS450 shares many of these attributes but is tailored for applications requiring a slightly lower output, making it versatile for different RF circuit designs.

The PFDN440 is designed with specialized technologies that enhance its functionality in digital and mixed-signal environments. It integrates advanced semiconductor materials which reduce power consumption and improve efficiency without compromising performance. This device is particularly useful in applications that demand high-speed operation and reliability, making it a preferred choice for modern communication systems.

All these transistors utilize state-of-the-art manufacturing processes, including advanced doping techniques and epitaxial growth, which contribute to their excellent electrical characteristics. Their high thermal conductivity, high breakdown voltage, and wide frequency response range make these devices suitable for both commercial and specialized applications.

Overall, GE's PFMN440, PFMN445, PFDS455, PFDS450, and PFDN440 transistors are emblematic of modern RF technology, combining power, efficiency, and reliability to cater to a wide spectrum of RF applications.
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