Instrucciones de instalación

SALIDA AL EXTERIOR DE LA SECADORA (cont.)

ANTES DE COMENZAR

Quite las pelusas de la abertura de salida de la pared.

Pared

Abertura de conducto

interno

Verifique que

el regulador de tiro

de la campana de salida se abra

y cierre libremente.

SALIDA TRASERA ESTÁNDAR

Recomendamos instalar la secadora antes

que la lavadora. Esto permitirá un acceso directo para poder efectuar la conexión de salida.

Deslice el extremo del conducto de salida hacia la parte trasera de la secadora y sujete con cinta aislante o una abrazadera de mangueras.

Conducto

NOTA: Recomendamos el uso de un conducto de salida rígido de metal. Si utiliza un conducto semi-rígido de metal, córtelo con la longitud adecuada y trate de que no se aplaste detrás de la secadora.

•Para una instalación en línea recta, conecte la salida de la secadora a la pared con cinta aislante.

CONFIGURACIÓN RECOMENDADA PARA MINIMIZAR LAS OBSTRUCCIONES DE LA SALIDA

El uso de codos evitará que los conductos se tuerzan y caigan.

Conducto de transición

Lado de la pared

Lado

de la secadora

131

Page 130 Page 132
Page 131
Image 131
GE PFDS455, PFDS450, PFDN440, PFMN445 Salida Trasera Estándar, Quite las pelusas de la abertura de salida de la pared
Page 130 Page 132

PFMS455, PFMS450, PFDN445, PFDN440, PFDS450 specifications

The GE PFMN440, PFMN445, PFDS455, PFDS450, and PFDN440 are part of GE’s innovative family of radio frequency (RF) power transistors designed for various commercial and industrial applications. These devices are renowned for their efficient performance, providing a blend of high power output and reliability, ideal for telecommunications, broadcasting, and other RF applications.

The GE PFMN440 and PFMN445 are members of the RF transistor family that offer robust performance in high-frequency applications. The PFMN440 is particularly noted for its outstanding linearity and power gain, which makes it suitable for use in RF amplifiers and transmitters. Its compact package and advanced thermal management design enable efficient heat dissipation, which is critical in maintaining performance under load. The PFMN445, with a higher power rating, amplifies these characteristics, supporting greater output levels while maintaining linearity, resulting in clearer signal output.

The PFDS455 and PFDS450, on the other hand, are optimized for industrial applications with features that emphasize durability and efficiency. The PFDS455 stands out for its ability to handle higher voltages and currents, making it an excellent choice for applications that require resilience against overloads. The device's superior thermal stability ensures that it performs consistently across a range of operational environments. The PFDS450 shares many of these attributes but is tailored for applications requiring a slightly lower output, making it versatile for different RF circuit designs.

The PFDN440 is designed with specialized technologies that enhance its functionality in digital and mixed-signal environments. It integrates advanced semiconductor materials which reduce power consumption and improve efficiency without compromising performance. This device is particularly useful in applications that demand high-speed operation and reliability, making it a preferred choice for modern communication systems.

All these transistors utilize state-of-the-art manufacturing processes, including advanced doping techniques and epitaxial growth, which contribute to their excellent electrical characteristics. Their high thermal conductivity, high breakdown voltage, and wide frequency response range make these devices suitable for both commercial and specialized applications.

Overall, GE's PFMN440, PFMN445, PFDS455, PFDS450, and PFDN440 transistors are emblematic of modern RF technology, combining power, efficiency, and reliability to cater to a wide spectrum of RF applications.
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