Installation Instructions

3REVERSE DOOR HANDLE AND CAPS (CONT.)

EReassemble the outer handle to the inner handle, using 3 screws (#8 x 0.625″ tapping screws).

 

3 x D

 

Screws

 

(inner

Outer

handle)

handle

 

FAssemble the new right-side door cap (from reversibility kit), using 2 screws (#8 x 0.625″ tapping screws).

2 x D Screws

Door cap

REVERSE HINGE AND CAPS (CONT.)

Outer window

Snap

Inner cover

 

(Mask)

Snap

 

•Turn the inner door on a soft , protected flat surface so that the inner part faces up.

•Remove the screws, nuts and washers on the opposite side of the hinge, using a quadrex screwdriver.

•Disassemble the inner door cap from the inner door by removing 2 screws (#8 x 0.75″ tapping screws).

•Disassemble the hinge from the inner door by removing 4 screws (#8-32 x 0.50″ machine screws).

Put the chrome cover aside on a soft, protected flat surface.

4REVERSE HINGE AND CAPS

•Lay the inner door down on a soft , protected flat surface so that the inner part faces down. Disassemble the outer window by opening 2 snaps, lay the outer window on a soft, protected flat surface.

•Disassemble the inner cover (mask) by opening 2 snaps, lay the inner cover (mask) on a soft, protected flat surface.

Remove

4 x E screws

Hinge

Inner door cap

2 screws,

2 x D

2 nuts and

2 washers

Screws

37

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GE PFMN440, PFDS450, PFDN440, PFMN445, PFDS455, PFMS450, PFDN445, PFMS455 operating instructions Reverse Hinge and Caps
Page 36 Page 38

PFMS455, PFMS450, PFDN445, PFDN440, PFDS450 specifications

The GE PFMN440, PFMN445, PFDS455, PFDS450, and PFDN440 are part of GE’s innovative family of radio frequency (RF) power transistors designed for various commercial and industrial applications. These devices are renowned for their efficient performance, providing a blend of high power output and reliability, ideal for telecommunications, broadcasting, and other RF applications.

The GE PFMN440 and PFMN445 are members of the RF transistor family that offer robust performance in high-frequency applications. The PFMN440 is particularly noted for its outstanding linearity and power gain, which makes it suitable for use in RF amplifiers and transmitters. Its compact package and advanced thermal management design enable efficient heat dissipation, which is critical in maintaining performance under load. The PFMN445, with a higher power rating, amplifies these characteristics, supporting greater output levels while maintaining linearity, resulting in clearer signal output.

The PFDS455 and PFDS450, on the other hand, are optimized for industrial applications with features that emphasize durability and efficiency. The PFDS455 stands out for its ability to handle higher voltages and currents, making it an excellent choice for applications that require resilience against overloads. The device's superior thermal stability ensures that it performs consistently across a range of operational environments. The PFDS450 shares many of these attributes but is tailored for applications requiring a slightly lower output, making it versatile for different RF circuit designs.

The PFDN440 is designed with specialized technologies that enhance its functionality in digital and mixed-signal environments. It integrates advanced semiconductor materials which reduce power consumption and improve efficiency without compromising performance. This device is particularly useful in applications that demand high-speed operation and reliability, making it a preferred choice for modern communication systems.

All these transistors utilize state-of-the-art manufacturing processes, including advanced doping techniques and epitaxial growth, which contribute to their excellent electrical characteristics. Their high thermal conductivity, high breakdown voltage, and wide frequency response range make these devices suitable for both commercial and specialized applications.

Overall, GE's PFMN440, PFMN445, PFDS455, PFDS450, and PFDN440 transistors are emblematic of modern RF technology, combining power, efficiency, and reliability to cater to a wide spectrum of RF applications.
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