Installation Instructions

INSTALLING THE PEDESTAL (if desired) (cont.)

4 LEVEL THE WASHER OR DRYER

AStand the washer or dryer upright. Move it close to its final location.

BMake sure that the washer or dryer is level by placing a level on top. Check side to side and front to back.

CUse an open ended wrench

to adjust the legs in and out. Tighten the lock nut against the bottom

of the pedestal.

NOTE: To minimize vibration, the locking nuts must be tight.

6 REMOVE SHIPPING SCREWS

Remove the 4 shipping screws on the back side of the washer.

7 FINALIzE THE INSTALLATION

Refer to the washer or dryer Installation Instructions to complete the installation.

5

A

B

C

D

REINSTALL THE DRAWER

Check to

 

be sure the

 

slides are

 

closed.

 

Slide the

 

drawer

Drawer

into the

opening.

Divider

 

Align the

 

drawer

 

supports to the

slides on each

side.

 

Reinstall the original screws into each drawer slide. Tighten both screws.

Open the drawer fully. Slide drawer divider into slots in the center of the drawer. The drawer should slide smoothly when you push it closed.

45

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GE PFMN440, PFDS450, PFDN440, PFMN445, PFDS455 Level the Washer or Dryer, Remove Shipping Screws, Reinstall the Drawer
Page 44 Page 46

PFMS455, PFMS450, PFDN445, PFDN440, PFDS450 specifications

The GE PFMN440, PFMN445, PFDS455, PFDS450, and PFDN440 are part of GE’s innovative family of radio frequency (RF) power transistors designed for various commercial and industrial applications. These devices are renowned for their efficient performance, providing a blend of high power output and reliability, ideal for telecommunications, broadcasting, and other RF applications.

The GE PFMN440 and PFMN445 are members of the RF transistor family that offer robust performance in high-frequency applications. The PFMN440 is particularly noted for its outstanding linearity and power gain, which makes it suitable for use in RF amplifiers and transmitters. Its compact package and advanced thermal management design enable efficient heat dissipation, which is critical in maintaining performance under load. The PFMN445, with a higher power rating, amplifies these characteristics, supporting greater output levels while maintaining linearity, resulting in clearer signal output.

The PFDS455 and PFDS450, on the other hand, are optimized for industrial applications with features that emphasize durability and efficiency. The PFDS455 stands out for its ability to handle higher voltages and currents, making it an excellent choice for applications that require resilience against overloads. The device's superior thermal stability ensures that it performs consistently across a range of operational environments. The PFDS450 shares many of these attributes but is tailored for applications requiring a slightly lower output, making it versatile for different RF circuit designs.

The PFDN440 is designed with specialized technologies that enhance its functionality in digital and mixed-signal environments. It integrates advanced semiconductor materials which reduce power consumption and improve efficiency without compromising performance. This device is particularly useful in applications that demand high-speed operation and reliability, making it a preferred choice for modern communication systems.

All these transistors utilize state-of-the-art manufacturing processes, including advanced doping techniques and epitaxial growth, which contribute to their excellent electrical characteristics. Their high thermal conductivity, high breakdown voltage, and wide frequency response range make these devices suitable for both commercial and specialized applications.

Overall, GE's PFMN440, PFMN445, PFDS455, PFDS450, and PFDN440 transistors are emblematic of modern RF technology, combining power, efficiency, and reliability to cater to a wide spectrum of RF applications.
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