About dryer features (cont.).

GEAppliances.com

Built-In Rack Dry System

A handy drying rack may be used for drying items such as tennis shoes. Place items flat on the drying rack and block such items as wool sweaters and delicate fabrics. Dry with low heat.

To install the Built-In Rack Dry System

1. Make sure the drum of the dryer is oriented so the rack drying system is on the left side of the dryer.

2.Pull the drying rack screen out from the left side and engage the handle “posts” in

the opposite baffle slots.

3. Place the garment on the rack and close the door. 4. Press the DRyER RACK button.

5. Select desired time.

6.Press the START/PAUSE button.

 

NOTE:

 

n Do not use this drying rack when there are other clothes in the dryer.

Engage the handle posts

n Make sure to detach the drying rack at the end of the cycle and fully retract the

 

screen back into the baffle.

To Use the Built-In Hook for Hanging Garments

1. Make sure the drum of the dryer is oriented so the hook is on the top center of the dryer.

2. Using your finger, pull the hook out of the baffle.

3.Hang the garment on a hanger, hang the hanger on the hook and close the door.

4.Press the DRyER RACK button.

5.Select the desired time.

6.Press the START/PAUSE button.

Reverse Tumble™

All Profile front-load matching dryers are equipped with the Reverse Tumble™ feature, as part of the Duo Dry Plus system™. By reversing the direction

of drum rotation during the drying cycle, your dryer will tangle the clothes load less, dry more evenly and improve drying times. Typical loads such

as bed and bath mixed loads, where sheets, towels and pillow cases are laundered together, benefit from this capability. When the dryer reverses direction, there will be a slight pause and sound change. This is normal.

All dryer cycles utilize this feature, except when the rack dry option is selected, in which case the drum does not tumble.

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GE PFDS455, PFDS450, PFDN440 Built-In Rack Dry System, To Use the Built-In Hook for Hanging Garments, Reverse Tumble
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PFMS455, PFMS450, PFDN445, PFDN440, PFDS450 specifications

The GE PFMN440, PFMN445, PFDS455, PFDS450, and PFDN440 are part of GE’s innovative family of radio frequency (RF) power transistors designed for various commercial and industrial applications. These devices are renowned for their efficient performance, providing a blend of high power output and reliability, ideal for telecommunications, broadcasting, and other RF applications.

The GE PFMN440 and PFMN445 are members of the RF transistor family that offer robust performance in high-frequency applications. The PFMN440 is particularly noted for its outstanding linearity and power gain, which makes it suitable for use in RF amplifiers and transmitters. Its compact package and advanced thermal management design enable efficient heat dissipation, which is critical in maintaining performance under load. The PFMN445, with a higher power rating, amplifies these characteristics, supporting greater output levels while maintaining linearity, resulting in clearer signal output.

The PFDS455 and PFDS450, on the other hand, are optimized for industrial applications with features that emphasize durability and efficiency. The PFDS455 stands out for its ability to handle higher voltages and currents, making it an excellent choice for applications that require resilience against overloads. The device's superior thermal stability ensures that it performs consistently across a range of operational environments. The PFDS450 shares many of these attributes but is tailored for applications requiring a slightly lower output, making it versatile for different RF circuit designs.

The PFDN440 is designed with specialized technologies that enhance its functionality in digital and mixed-signal environments. It integrates advanced semiconductor materials which reduce power consumption and improve efficiency without compromising performance. This device is particularly useful in applications that demand high-speed operation and reliability, making it a preferred choice for modern communication systems.

All these transistors utilize state-of-the-art manufacturing processes, including advanced doping techniques and epitaxial growth, which contribute to their excellent electrical characteristics. Their high thermal conductivity, high breakdown voltage, and wide frequency response range make these devices suitable for both commercial and specialized applications.

Overall, GE's PFMN440, PFMN445, PFDS455, PFDS450, and PFDN440 transistors are emblematic of modern RF technology, combining power, efficiency, and reliability to cater to a wide spectrum of RF applications.
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