Évacuation Arrière sTANDARD, De ruban en toile

Instructions d’installation

ÉVACUATION DE LA sÉCHEUsE (suite)

AVANT DE COMMENCER

Enlevez toute charpie de l’ouverture d’évacuation murale.

	Mur
Ouverture
du conduit	Vérifiez que le volet
interne	Vérifiez que le volet
	de l’évent mural s’ouvre et
	se ferme librement.

ÉVACUATION ARRIÈRE sTANDARD

Nous vous recommandons d’installer votre sécheuse avant d’installer votre laveuse. Cela permettra un accès direct pour faciliter le raccordement de l’évacuation.

Insérez l’extrémité du conduit d’évacuation sur le raccord arrière de la sécheuse et fixez-la avec du ruban de toile ou un collier de fixation.

Conduit

REMARQUE : Nous vous recommandons fortement d’utiliser un conduit d’évacuation rigide et en métal. Si vous utilisez un conduit métallique semi-rigide, coupez-le à la bonne longueur et évitez d’écraser le conduit derrière la sécheuse.

•Pour une installation droite, raccordez le conduit d’évacuation de la sécheuse au mur l’aide

de ruban en toile.

CONFIGURATION RECOMMANDÉE POUR MINIMIsER UN BLOCAGE DU CONDUIT

L’utilisation de coudes empêchera les conduits de se déformer et de s’écraser.

Conduit transitoire

Côté mur

Côté

sécheuse

PFMS455, PFMS450, PFDN445, PFDN440, PFDS450 specifications

The GE PFMN440, PFMN445, PFDS455, PFDS450, and PFDN440 are part of GE’s innovative family of radio frequency (RF) power transistors designed for various commercial and industrial applications. These devices are renowned for their efficient performance, providing a blend of high power output and reliability, ideal for telecommunications, broadcasting, and other RF applications.

The GE PFMN440 and PFMN445 are members of the RF transistor family that offer robust performance in high-frequency applications. The PFMN440 is particularly noted for its outstanding linearity and power gain, which makes it suitable for use in RF amplifiers and transmitters. Its compact package and advanced thermal management design enable efficient heat dissipation, which is critical in maintaining performance under load. The PFMN445, with a higher power rating, amplifies these characteristics, supporting greater output levels while maintaining linearity, resulting in clearer signal output.

The PFDS455 and PFDS450, on the other hand, are optimized for industrial applications with features that emphasize durability and efficiency. The PFDS455 stands out for its ability to handle higher voltages and currents, making it an excellent choice for applications that require resilience against overloads. The device's superior thermal stability ensures that it performs consistently across a range of operational environments. The PFDS450 shares many of these attributes but is tailored for applications requiring a slightly lower output, making it versatile for different RF circuit designs.

The PFDN440 is designed with specialized technologies that enhance its functionality in digital and mixed-signal environments. It integrates advanced semiconductor materials which reduce power consumption and improve efficiency without compromising performance. This device is particularly useful in applications that demand high-speed operation and reliability, making it a preferred choice for modern communication systems.

All these transistors utilize state-of-the-art manufacturing processes, including advanced doping techniques and epitaxial growth, which contribute to their excellent electrical characteristics. Their high thermal conductivity, high breakdown voltage, and wide frequency response range make these devices suitable for both commercial and specialized applications.

Overall, GE's PFMN440, PFMN445, PFDS455, PFDS450, and PFDN440 transistors are emblematic of modern RF technology, combining power, efficiency, and reliability to cater to a wide spectrum of RF applications.

GE PFMS455 Évacuation Arrière sTANDARD, Enlevez toute charpie de l’ouverture d’évacuation murale

Models: PFMS455 PFMS450 PFDN445 PFDN440 PFDS450 PFDS455 PFMN445 PFMN440