Instrucciones de instalación

ANTES DE COMENZAR

Desenchufe la secadora del tomacorriente.

1QUITE EL MONTAJE DE LA PUERTA

Quite la tapa de la bisagra lateral abriendo la puerta de la secadora y quitando el tornillo de la parte trasera de la bisagra (tornillo auto-roscante #8 x .375”). Luego, usando

la mano, quite la tapa de la bisagra de la secadora.

1 x C Tornillos

Tapa

de la bisagra

1QUITE EL MONTAJE DE LA PUERTA (cont.)

Cierre y sostenga la puerta, quite los 2 tornillos de la bisagra (tornillos auto-roscantes #10 x 0.75″). Aleje la puerta del panel frontal de la secadora.

2 x B

Tornillos

2DESARME EL MONTAJE DE LA PUERTA

Coloque la puerta sobre una superficie plana, suave y protegida de modo que la parte interior mire hacia arriba (la puerta descansa sobre el lado de la manija).

Quite los 7 tornillos (tornillos auto-roscantes #10 x 1.125”) ubicados alrededor del perímetro de la puerta.

7 x A Tornillos

Dé vuelta el montaje de la puerta y separe la tapa de cromo de la puerta interior. Coloque la puerta interior en una superficie plana, suave y protegida.

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GE PFMN445, PFDS450, PFDN440, PFDS455, PFMS450, PFMN440, PFDN445 Quite EL Montaje DE LA Puerta, Desarme EL Montaje DE LA Puerta
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PFMS455, PFMS450, PFDN445, PFDN440, PFDS450 specifications

The GE PFMN440, PFMN445, PFDS455, PFDS450, and PFDN440 are part of GE’s innovative family of radio frequency (RF) power transistors designed for various commercial and industrial applications. These devices are renowned for their efficient performance, providing a blend of high power output and reliability, ideal for telecommunications, broadcasting, and other RF applications.

The GE PFMN440 and PFMN445 are members of the RF transistor family that offer robust performance in high-frequency applications. The PFMN440 is particularly noted for its outstanding linearity and power gain, which makes it suitable for use in RF amplifiers and transmitters. Its compact package and advanced thermal management design enable efficient heat dissipation, which is critical in maintaining performance under load. The PFMN445, with a higher power rating, amplifies these characteristics, supporting greater output levels while maintaining linearity, resulting in clearer signal output.

The PFDS455 and PFDS450, on the other hand, are optimized for industrial applications with features that emphasize durability and efficiency. The PFDS455 stands out for its ability to handle higher voltages and currents, making it an excellent choice for applications that require resilience against overloads. The device's superior thermal stability ensures that it performs consistently across a range of operational environments. The PFDS450 shares many of these attributes but is tailored for applications requiring a slightly lower output, making it versatile for different RF circuit designs.

The PFDN440 is designed with specialized technologies that enhance its functionality in digital and mixed-signal environments. It integrates advanced semiconductor materials which reduce power consumption and improve efficiency without compromising performance. This device is particularly useful in applications that demand high-speed operation and reliability, making it a preferred choice for modern communication systems.

All these transistors utilize state-of-the-art manufacturing processes, including advanced doping techniques and epitaxial growth, which contribute to their excellent electrical characteristics. Their high thermal conductivity, high breakdown voltage, and wide frequency response range make these devices suitable for both commercial and specialized applications.

Overall, GE's PFMN440, PFMN445, PFDS455, PFDS450, and PFDN440 transistors are emblematic of modern RF technology, combining power, efficiency, and reliability to cater to a wide spectrum of RF applications.
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