Installation Instructions

SIDE VENTING:

Dryer Exhaust to right of cabinet for Electric models only.

Dryer Exhaust to left of cabinet for Gas and Electric models.

WARNING – BEFORE PERFORMING THIS EXHAUST INSTALLATION, BE SURE TO DISCONNECT THE DRYER FROM ITS ELECTRICAL SUPPLY. PROTECT YOUR HANDS AND ARMS FROM SHARP EDGES WHEN WORKING INSIDE THE CABINET. BE SURE TO WEAR GLOVES.

Remove Right screw

and save

Left

Bottom

Remove desired knockout (one only)

Detach and remove the bottom, right or left side knockout as desired. Remove the screw inside the dryer exhaust duct and save. Pull the duct out of the dryer.

Fixing hole

A

13 1⁄2″

Cut the duct as shown and keep portion A.

TAB LOCATION

Not for gas

Bend tab up 45°

Through the rear opening, locate the tab in the middle of the appliance base. Lift the tab to about 45°, using a flat-blade screwdriver.

ADDING A NEW DUCT

Fixing hole

Portion “A”

Left side exhaust

Reconnect the cut portion (A) of the duct to the blower housing. Make sure that the shortened duct is aligned with the tab in the base. Use the screw saved previously to secure the duct in place through the tab on the appliance base.

ADDING ELBOW AND DUCT FOR EXHAUST TO LEFT OR RIGHT SIDE OF CABINET

Internal duct

Rear opening

•Insert the 4″ elbow through the rear opening and connect the elbow to the dryer internal duct.

Side opening

•Insert the 4″ duct through the side opening and connect it to the elbow.

CAUTION: Do not pull or damage the electrical wires and do not remove the vinyl cover from the electrical components inside the dryer when inserting the duct. A slight interference may occur between the exhaust and the wire components.

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GE PFMN440, PFDS450, PFDN440, PFMN445, PFDS455, PFMS450, PFDN445, PFMS455 Side Venting, TAB Location, Adding a NEW Duct
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PFMS455, PFMS450, PFDN445, PFDN440, PFDS450 specifications

The GE PFMN440, PFMN445, PFDS455, PFDS450, and PFDN440 are part of GE’s innovative family of radio frequency (RF) power transistors designed for various commercial and industrial applications. These devices are renowned for their efficient performance, providing a blend of high power output and reliability, ideal for telecommunications, broadcasting, and other RF applications.

The GE PFMN440 and PFMN445 are members of the RF transistor family that offer robust performance in high-frequency applications. The PFMN440 is particularly noted for its outstanding linearity and power gain, which makes it suitable for use in RF amplifiers and transmitters. Its compact package and advanced thermal management design enable efficient heat dissipation, which is critical in maintaining performance under load. The PFMN445, with a higher power rating, amplifies these characteristics, supporting greater output levels while maintaining linearity, resulting in clearer signal output.

The PFDS455 and PFDS450, on the other hand, are optimized for industrial applications with features that emphasize durability and efficiency. The PFDS455 stands out for its ability to handle higher voltages and currents, making it an excellent choice for applications that require resilience against overloads. The device's superior thermal stability ensures that it performs consistently across a range of operational environments. The PFDS450 shares many of these attributes but is tailored for applications requiring a slightly lower output, making it versatile for different RF circuit designs.

The PFDN440 is designed with specialized technologies that enhance its functionality in digital and mixed-signal environments. It integrates advanced semiconductor materials which reduce power consumption and improve efficiency without compromising performance. This device is particularly useful in applications that demand high-speed operation and reliability, making it a preferred choice for modern communication systems.

All these transistors utilize state-of-the-art manufacturing processes, including advanced doping techniques and epitaxial growth, which contribute to their excellent electrical characteristics. Their high thermal conductivity, high breakdown voltage, and wide frequency response range make these devices suitable for both commercial and specialized applications.

Overall, GE's PFMN440, PFMN445, PFDS455, PFDS450, and PFDN440 transistors are emblematic of modern RF technology, combining power, efficiency, and reliability to cater to a wide spectrum of RF applications.
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