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GE PFMS455, PFDS450, PFDN440, PFMN445 Comment Préparer LE sOCLE, Pour LEs sÉCHEUsEs Uniquement

Models: PFMS455 PFMS450 PFDN445 PFDN440 PFDS450 PFDS455 PFMN445 PFMN440

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Instructions d’installation

2 COMMENT PRÉPARER LE sOCLE

ATirez le tiroir

au maximum.

B Retirez les vis des glissières du tiroir. Faites sortir le tiroir hors de la base et laissez-le de côté.

POUR LEs sÉCHEUsEs UNIQUEMENT :

CSaisissez-vous des 4 cales de support dans le paquet contenant toutes les pièces. Chaque cale possède 2 protubérances qui s’insèrent dans les trous situés sur le socle. Enfoncez les cales en caoutchouc dans les trous dans chaque coin sur le dessus du socle comme indiqué.

REMARQUE : Les cales de support ne doivent être installées que sur la sécheuse. N’INsTALLEZ PAs CEs CALEs sUR LE sOCLE DE LA LAVEUsE.

3

A

B

C

COMMENT INsTALLER LE sOCLE sUR LA LAVEUsE OU LA sÉCHEUsE

Placez le socle au bas de l’appareil. Veillez à ce que l’avant du tiroir soit placé à l’avant de la laveuse.

Alignez les trous du socle sur ceux situés au bas de l’appareil. Utilisez un tournevis cruciforme pour installer les 4 boulons dans le socle et la base de l’appareil.

Ne les serrez pas.

Faites glisser le socle vers l’appareil, jusqu’à ce qu’il soit aligné de l’avant sur l’arrière. Utilisez une clé à douille 7 mm pour serrer les boulons.

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GE PFMS455, PFDS450, PFDN440, PFMN445, PFDS455, PFMS450, PFMN440 Comment Préparer LE sOCLE, Pour LEs sÉCHEUsEs Uniquement
Page 94 Page 96

PFMS455, PFMS450, PFDN445, PFDN440, PFDS450 specifications

The GE PFMN440, PFMN445, PFDS455, PFDS450, and PFDN440 are part of GE’s innovative family of radio frequency (RF) power transistors designed for various commercial and industrial applications. These devices are renowned for their efficient performance, providing a blend of high power output and reliability, ideal for telecommunications, broadcasting, and other RF applications.

The GE PFMN440 and PFMN445 are members of the RF transistor family that offer robust performance in high-frequency applications. The PFMN440 is particularly noted for its outstanding linearity and power gain, which makes it suitable for use in RF amplifiers and transmitters. Its compact package and advanced thermal management design enable efficient heat dissipation, which is critical in maintaining performance under load. The PFMN445, with a higher power rating, amplifies these characteristics, supporting greater output levels while maintaining linearity, resulting in clearer signal output.

The PFDS455 and PFDS450, on the other hand, are optimized for industrial applications with features that emphasize durability and efficiency. The PFDS455 stands out for its ability to handle higher voltages and currents, making it an excellent choice for applications that require resilience against overloads. The device's superior thermal stability ensures that it performs consistently across a range of operational environments. The PFDS450 shares many of these attributes but is tailored for applications requiring a slightly lower output, making it versatile for different RF circuit designs.

The PFDN440 is designed with specialized technologies that enhance its functionality in digital and mixed-signal environments. It integrates advanced semiconductor materials which reduce power consumption and improve efficiency without compromising performance. This device is particularly useful in applications that demand high-speed operation and reliability, making it a preferred choice for modern communication systems.

All these transistors utilize state-of-the-art manufacturing processes, including advanced doping techniques and epitaxial growth, which contribute to their excellent electrical characteristics. Their high thermal conductivity, high breakdown voltage, and wide frequency response range make these devices suitable for both commercial and specialized applications.

Overall, GE's PFMN440, PFMN445, PFDS455, PFDS450, and PFDN440 transistors are emblematic of modern RF technology, combining power, efficiency, and reliability to cater to a wide spectrum of RF applications.