Instrucciones de instalación

CONFIGURACIÓN FINAL

1NIVELE LA SECADORA

Coloque la secadora en posición vertical cerca

de la ubicación definitiva y ajuste las cuatro patas niveladoras para garantizar que la secadora

se encuentre nivelada de lado a lado y del frente a la parte trasera.

Elevar Bajar

2CONECTE EL CABLE SERIAL

Sujete el cable serial de la conexión de lavadora

y secadora al puerto serial ubicado en la parte trasera de la secadora.

Conecte el otro extremo del cable a la lavadora antes de colocar la lavadora en su posición definitiva.

Puerto serial

Parte trasera de la lavadora

3ENCHUFE LA SECADORA

4INSTRUCCIONES DE CONEXIÓN A TIERRA

Este electrodoméstico se debe conectar a tierra.

En caso de mal funcionamiento o avería, la conexión a tierra reducirá el riesgo de descarga eléctrica,

al brindar un camino de menor resistencia para la corriente eléctrica. El electrodoméstico se encuentra equipado con un cable que posee un equipo de conducción a tierra y un enchufe de conexión a tierra. El enchufe se debe colocar en un tomacorriente instalado de forma adecuada y se deberá conectar a tierra de acuerdo con todos los códigos y ordenanzas locales.

4INICIO DE LA SECADORA

Presione el botón POWER (encendido).

NOTA: Si la secadora ha sido expuesta a temperaturas bajo cero por un período prolongado, deje que suba la temperatura antes de presionar POWER. De otra manera, la pantalla no se encenderá.

Su secadora ya está lista para usar.

REPARACIÓN

ADVERTENCIA:

Etiquete todos los cables antes

de la desconexión cuando haga reparaciones de los controles. Los errores de cableado pueden provocar un funcionamiento inadecuado y peligroso después

de la reparación/instalación.

Para piezas de repuesto y otra información, diríjase a la página 151 para obtener números telefónicos de servicio.

Verifique que haya una conexión a tierra adecuada antes del uso.

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GE PFMS455, PFDS450, PFDN440, PFMN445, PFDS455, PFMS450, PFMN440, PFDN445 operating instructions Configuración Final
Page 134 Page 136

PFMS455, PFMS450, PFDN445, PFDN440, PFDS450 specifications

The GE PFMN440, PFMN445, PFDS455, PFDS450, and PFDN440 are part of GE’s innovative family of radio frequency (RF) power transistors designed for various commercial and industrial applications. These devices are renowned for their efficient performance, providing a blend of high power output and reliability, ideal for telecommunications, broadcasting, and other RF applications.

The GE PFMN440 and PFMN445 are members of the RF transistor family that offer robust performance in high-frequency applications. The PFMN440 is particularly noted for its outstanding linearity and power gain, which makes it suitable for use in RF amplifiers and transmitters. Its compact package and advanced thermal management design enable efficient heat dissipation, which is critical in maintaining performance under load. The PFMN445, with a higher power rating, amplifies these characteristics, supporting greater output levels while maintaining linearity, resulting in clearer signal output.

The PFDS455 and PFDS450, on the other hand, are optimized for industrial applications with features that emphasize durability and efficiency. The PFDS455 stands out for its ability to handle higher voltages and currents, making it an excellent choice for applications that require resilience against overloads. The device's superior thermal stability ensures that it performs consistently across a range of operational environments. The PFDS450 shares many of these attributes but is tailored for applications requiring a slightly lower output, making it versatile for different RF circuit designs.

The PFDN440 is designed with specialized technologies that enhance its functionality in digital and mixed-signal environments. It integrates advanced semiconductor materials which reduce power consumption and improve efficiency without compromising performance. This device is particularly useful in applications that demand high-speed operation and reliability, making it a preferred choice for modern communication systems.

All these transistors utilize state-of-the-art manufacturing processes, including advanced doping techniques and epitaxial growth, which contribute to their excellent electrical characteristics. Their high thermal conductivity, high breakdown voltage, and wide frequency response range make these devices suitable for both commercial and specialized applications.

Overall, GE's PFMN440, PFMN445, PFDS455, PFDS450, and PFDN440 transistors are emblematic of modern RF technology, combining power, efficiency, and reliability to cater to a wide spectrum of RF applications.
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