Installation Instructions

TEST FOR LEAKS

WARNING – Never use an open flame to test for gas leaks.

Check all connections for leaks with soapy solution or equivalent.

Apply a soap solution. The leak test solution must not contain ammonia, which could cause damage to the brass fittings.

If leaks are found, close the valve, retighten the joint and repeat the soap test.

Open Gas

Valve

ELECTRICAL CONNECTION INFORMATION FOR GAS DRYERS

WARNING – To reduce the risk of fire, electrical shock and personal injury:

•Do not use an extension cord or an adapter plug with this appliance.

•The dryer must be electrically grounded in accordance with local codes and ordinances, or in the absence of local codes, in accordance with the NATIONAL ELECTRICAL CODE, ANSI/NFPA NO. 70.

ELECTRICAL REQUIREMENTS

FOR GAS DRYERS

This appliance must be supplied with 120V, 60Hz, and connected to a properly grounded branch circuit, protected by a 15- or 20-amp circuit breaker or time-delay fuse.

If electrical supply provided does not meet

the above specifications, it is recommended that a licensed electrician install an approved outlet.

WARNING – This dryer is equipped with a three-prong (grounding) plug for your protection against shock hazard and should be plugged directly into a properly grounded three- prong receptacle. Do not cut or remove the grounding terminal from this plug.

Ensure proper ground exists before use.

If local codes permit, an external ground wire (not provided), which meets local codes, may be added by attaching to the green ground screw on the rear of the dryer, and to an alternate established ground.

Ensure proper ground exists before use.

Ground

Screw

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GE PFMN440 Test for Leaks, Electrical Requirements For GAS Dryers, Electrical Connection Information for GAS Dryers
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PFMS455, PFMS450, PFDN445, PFDN440, PFDS450 specifications

The GE PFMN440, PFMN445, PFDS455, PFDS450, and PFDN440 are part of GE’s innovative family of radio frequency (RF) power transistors designed for various commercial and industrial applications. These devices are renowned for their efficient performance, providing a blend of high power output and reliability, ideal for telecommunications, broadcasting, and other RF applications.

The GE PFMN440 and PFMN445 are members of the RF transistor family that offer robust performance in high-frequency applications. The PFMN440 is particularly noted for its outstanding linearity and power gain, which makes it suitable for use in RF amplifiers and transmitters. Its compact package and advanced thermal management design enable efficient heat dissipation, which is critical in maintaining performance under load. The PFMN445, with a higher power rating, amplifies these characteristics, supporting greater output levels while maintaining linearity, resulting in clearer signal output.

The PFDS455 and PFDS450, on the other hand, are optimized for industrial applications with features that emphasize durability and efficiency. The PFDS455 stands out for its ability to handle higher voltages and currents, making it an excellent choice for applications that require resilience against overloads. The device's superior thermal stability ensures that it performs consistently across a range of operational environments. The PFDS450 shares many of these attributes but is tailored for applications requiring a slightly lower output, making it versatile for different RF circuit designs.

The PFDN440 is designed with specialized technologies that enhance its functionality in digital and mixed-signal environments. It integrates advanced semiconductor materials which reduce power consumption and improve efficiency without compromising performance. This device is particularly useful in applications that demand high-speed operation and reliability, making it a preferred choice for modern communication systems.

All these transistors utilize state-of-the-art manufacturing processes, including advanced doping techniques and epitaxial growth, which contribute to their excellent electrical characteristics. Their high thermal conductivity, high breakdown voltage, and wide frequency response range make these devices suitable for both commercial and specialized applications.

Overall, GE's PFMN440, PFMN445, PFDS455, PFDS450, and PFDN440 transistors are emblematic of modern RF technology, combining power, efficiency, and reliability to cater to a wide spectrum of RF applications.
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